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TMPG06-24A-E3/54

P1-P3P4-P5
TMPG06-6.8 thru TMPG06-43A
Document Number 88404
22-Dec-05
Vishay General Semiconductor
www.vishay.com
1
P
a
t
e
n
t
e
d
*
* Patent #'s
4,980,315
5,166,769
5,278,094
Case Style MPG06
Automotive Transient Voltage Suppressors
High Temperature Stability & High
Reliability Conditions
Major Ratings and Characteristics
V
(BR)
6.8 V to 43 V
P
PPM
400 W
P
D
1.0 W
I
FSM
40 A
T
j
max. 185 °C
Features
• Patented PAR
®
construction
• Available in Unidirectional polarity only
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Typical I
D
less than 1.0 µA above 10 V rating
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Typical Applications
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
Telecommunication.
Mechanical Data
Case: MPG06, molded epoxy over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Parameter Symbol Limit Unit
Peak power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
P
PPM
Minimum 400 W
Peak pulse current with a 10/1000 µs waveform
(1)(2)
(Fig. 3)
I
PPM
see next table A
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5) P
D
1.0 W
Peak forward surge current 8.3 ms single half sine-wave
(2)
I
FSM
40 A
Maximum instatntaneous forward voltage at 25 A
(2)
V
F
3.5 V
Operating junction and storage temperature range T
J
, T
STG
- 65 to + 185 °C
www.vishay.com
2
Document Number 88404
22-Dec-05
TMPG06-6.8 thru TMPG06-43A
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Notes:
(1) Pulse test: t
p
≤ 50 ms
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Device Type
Maximum
Breakdown Voltage
V
(BR)
(1)
at I
T
(V)
Test
Current
I
T
(mA)
Stand-off
Voltage
V
WM
(V)
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
Reverse
Leakage
at V
WM
T
J
= 150 °C
I
D
(µA)
Peak
Pulse
Current
I
PPM
(2)
(A)
Maximum
Clamping
Voltage
at l
PPM
V
C
(Volts)
Maximum
Te m p.
Coefficient
of V
(BR)
(% / °C)
MIN MAX
TMPG06-6.8 6.12 7.48 10.0 5.50 300 1000 27.8 10.8 0.057
TMPG06-6.8A 6.45 7.14 10.0 5.80 300 1000 28.6 10.5 0.057
TMPG06-7.5 6.75 8.25 10.0 6.05 150 500 25.6 11.7 0.060
TMPG06-7.5A 7.13 7.88 10.0 6.40 150 500 26.5 11.3 0.061
TMPG06-8.2 7.38 9.02 10.0 6.63 50.0 200 24.0 12.5 0.065
TMPG06-8.2A 7.79 8.61 10.0 7.02 50.0 200 24.8 12.1 0.065
TMPG06-9.1 8.19 10.0 1.0 7.37 10.0 50.0 21.7 13.8 0.068
TMPG06-9.1A 8.65 9.55 1.0 7.78 10.0 50.0 22.4 13.4 0.068
TMPG06-10 9.00 11.0 1.0 8.10 5.0 20.0 26.7 15.0 0.073
TMPG06-10A 9.50 10.5 1.0 8.55 5.0 20.0 27.6 14.5 0.073
TMPG06-11 9.90 12.1 1.0 8.92 2.0 10.0 24.7 16.2 0.075
TMPG06-11A 10.5 11.6 1.0 9.40 2.0 10.0 25.6 15.6 0.075
TMPG06-12 10.8 13.2 1.0 9.72 1.0 5.0 23.1 17.3 0.076
TMPG06-12A 11.4 12.6 1.0 10.2 1.0 5.0 24.0 16.7 0.078
TMPG06-13 11.7 14.3 1.0 10.5 1.0 5.0 21.1 19.0 0.081
TMPG06-13A 12.4 13.7 1.0 11.1 1.0 5.0 22.0 18.2 0.081
TMPG06-15 13.5 16.3 1.0 12.1 1.0 5.0 18.2 22.0 0.084
TMPG06-15A 14.3 15.8 1.0 12.8 1.0 5.0 18.9 21.2 0.084
TMPG06-16 14.4 17.6 1.0 12.9 1.0 5.0 17.0 23.5 0.086
TMPG06-16A 15.2 16.8 1.0 13.6 1.0 5.0 17.8 22.5 0.086
TMPG06-18 16.2 19.8 1.0 14.5 1.0 5.0 15.1 26.5 0.088
TMPG06-18A 17.1 18.9 1.0 15.3 1.0 5.0 15.9 25.5 0.088
TMPG06-20 18.0 22.0 1.0 16.2 1.0 5.0 13.7 29.1 0.090
TMPG06-20A 19.0 21.0 1.0 17.0 1.0 5.0 14.4 27.7 0.090
TMPG06-22 19.8 24.2 1.0 17.8 1.0 5.0 12.5 31.9 0.092
TMPG06-22A 20.9 23.1 1.0 18.8 1.0 5.0 13.1 30.6 0.092
TMPG06-24 21.6 26.4 1.0 19.4 1.0 5.0 11.5 34.2 0.094
TMPG06-24A 22.8 25.2 1.0 20.5 1.0 5.0 12.0 33.2 0.094
TMPG06-27 24.3 29.7 1.0 21.8 1.0 5.0 10.2 39.1 0.096
TMPG06-27A 25.7 28.4 1.0 23.1 1.0 5.0 10.7 37.5 0.096
TMPG06-30 27.0 33.0 1.0 24.3 1.0 5.0 9.2 43.5 0.097
TMPG06-30A 28.5 31.5 1.0 25.6 1.0 5.0 9.7 41.4 0.097
TMPG06-33 29.7 36.3 1.0 26.8 1.0 5.0 8.4 47.7 0.098
TMPG06-33A 31.4 34.7 1.0 28.2 1.0 5.0 8.8 45.7 0.098
TMPG06-36 32.4 39.6 1.0 29.1 1.0 5.0 7.7 52.0 0.099
TMPG06-36A 34.2 37.8 1.0 30.8 1.0 5.0 8.0 49.9 0.099
TMPG06-39 35.1 42.9 1.0 31.6 1.0 5.0 7.1 56.4 0.100
TMPG06-39A 37.1 41.0 1.0 33.3 1.0 5.0 7.4 53.9 0.100
TMPG06-43 38.7 47.3 1.0 34.8 1.0 5.0 6.5 61.9 0.101
TMPG06-43A 40.9 45.2 1.0 36.8 1.0 5.0 6.7 59.3 0.101
TMPG06-6.8 thru TMPG06-43A
Document Number 88404
22-Dec-05
Vishay General Semiconductor
www.vishay.com
3
Ordering Information
Ratings and Characteristics Curves
(T
A
= 25 °C unless otherwise specified)
Preferred P/N Unit Weight (g) Preferred Package Code Base Quantity Delivery Mode
TMPG06-6.8A-E3/54 0.218 54 5500 13" Diameter Paper Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
P
PPM
-PeakPulse Power (kW)
0.1
1.0
10
100
td - Pulse Width (sec.)
TMPG06-6.8 - TMPG06-9.1A
TMPG06-10 - TMPG06-43A
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
100
75
50
25
0
0 25 50 75 100 125 150 175 200
Peak Pulse P
ower (P
PP
) or Current (I
PP
)
Derating in Percentage, %
TJ - Initial Temperature (°C)
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
td
0
1.0
2.0
3.0 4.0
tr = 10 µsec.
Peak Value
I
PPM
Half Value -
I
PPM
IPP
2
10/1000 µsec. Waveform
as defined by R.E.A.
T
J = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
t - Time (ms)
10
100
1000
10000
101.0 100 200
TJ = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Measured at
Zero Bias
Measured at Stand-off
Voltage V
WM
C
J
, Junction Capacitance (pF)
V(BR) - Breakdown Voltage (V)
P1-P3P4-P5

TMPG06-24A-E3/54

Mfr. #:
Buy TMPG06-24A-E3/54
Manufacturer:
Vishay Semiconductors
Description:
ESD Suppressors / TVS Diodes 400W,24V 5%,AXIAL PAR
Lifecycle:
New from this manufacturer.
Delivery:
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