SM2T27A

®
1/6
SM2T
TRANSIL™
REV. 3
K
A
STmite
(JEDEC DO-216AA)
January 2005
FEATURES
High Peak pulse power:
200 W (10/1000 µs )
1000 W ( 8/20 µs)
Stand-off voltage range 5 to 24V
Unidirectional types
Low clamping factor V
CL
/V
BR
Fast response time
1.0mm overall component height
DESCRIPTION
The SM2T series are Transil diodes designed spe-
cifically for portable equipment and miniaturized
electronics devices subject to ESD transient over-
voltages.
Fully compatible with pick and place equipment
and inspectable soldering joints.
Table 2: Absolute Ratings (T
amb
= 25°C)
Table 3: Thermal Resistances
Symbol Parameter Value Unit
P
PP Peak pulse power dissipation (see note
1
)
T
j
initial = T
amb
200 W
P Power dissipation on infinite heatsink
T
amb
= 100°C
2.5 W
I
FSM
Non repetitive surge peak forward current
t
p
= 10 ms
T
j
initial = T
amb
25 A
T
stg
T
j
Storage temperature range
Maximum junction temperature
-65 to 175
150
°C
T
L
Maximum lead temperature for soldering during 10 s. 260 °C
Note 1: 10/1000µs pulse waveform.
Symbol Parameter Value Unit
Rth(j-t) Junction to tab 20 °C/W
Rth(j-a) Junction to ambient on PCB with recommended pad layout 250 °C/W
Table 1: Order Codes
Part Number Marking
SM2T6V8A MUA
SM2T14A MUE
SM2T18A MUG
SM2T27A MUJ
SM2T
2/6
Table 4: Electrical Characteristics (T
amb
= 25°C)
Note 1: 10/1000µs pulse waveform.
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current @ V
RM
I
PP
Peak pulse current
αT Voltage temperature coefficient
V
F
Forward voltage drop
Types
I
RM
@ V
RM
V
BR
@ I
R
V
CL
@ I
PP
αT
C
max min max
note1
max typ
@ 0V
µAVVmAVA
10
-4
/°C
pF
SM2T6V8A 50 5 6.4 10 9.2 19.6 5.7 1600
SM2T14A 1 12 13.3 1 19.9 9 8.3 650
SM2T18A 1 16 17.1 1 26 7 8.8 500
SM2T27A 1 24 25.7 1 28.9 4.6 9.6 350
I
I
F
V
F
VV
CL
V
BR
V
RM
I
PP
I
RM
V
SM2T
3/6
Figure 1: Peak pulse power versus exponential
pulse duration
Figure 2: Relative variation of peak pulse
power versus initial junction temperature
Figure 3: Average power dissipation versus
ambient temperature
Figure 4: Variation of thermal impedance
junction to ambient versus pulse duration
Figure 5: Thermal resistance junction to
ambient versus copper surface under tab
Figure 6: Reverse leakage current versus
junction temperature (typical values)
1.E+01
1.E+02
1.E+03
1.E+04
0.01 0.10 1.00 10.00
P (W)
PP
t (ms)
p
T initial = 25°C
j
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150 175
%
T (°C)
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
Printed circuit board FR4, recommended pad layout
T (°C)
AMB
P(W)
T=
AMB
T
tab
0.1
1.0
10.0
100.0
1000.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
S=2cm²
S=0.135cm²
Z/R
th(j-c) th(j-c)
t (s)
p
0
50
100
150
200
250
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
S(cm²)
R (°C/W)
th(j-a)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 25 50 75 100 125 150
T (°C)
j
I (nA)
R
V=V
RRM

SM2T27A

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS DIODE 24V 28.9V DO216AA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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