DMP2130LDM-7 Datasheet DMP2130LDM-7 | P1-P3

DMP2130LDM

Document number: DS31118 Rev. 6 - 2

1 of 4

www.diodes.com

May 2008

DMP2130LDM

NEW PRODUCT

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Low R

DS(ON)

:

• 80 mΩ @V

GS

= -4.5V

• 110 mΩ @V

GS

= -2.7V

• 130 mΩ @V

GS

= -2.5V

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• "Green" Device (Note 4)

Mechanical Data

• Case: SOT-26

• Case Material – Molded Plastic. UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 2

• Ordering Information: See page 2

• Weight: 0.008 grams (approximate)

SOT-26

TOP VIEW

Internal Schematic

G

S

D

TOP VIEW

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±12

V

Drain Current (Note 1) Continuous T

A

= 25°C

T

A

= 70°C

I

D

-3.4

-2.7

A

Pulsed Drain Current (Note 2)

I

DM

-12 A

Body-Diode Continuous Current (Note 1)

I

S

2.0 A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)

P

D

1.25 W

Thermal Resistance, Junction to Ambient (Note 1); Steady-State

R

θ

JA

100

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

Please click here to visit our online spice models database.

DMP2130LDM

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

-20

⎯ ⎯

V

I

D

= -250μA, V

GS

= 0V

I

DSS

⎯ ⎯

-1

μA

V

DS

= -20V, V

GS

= 0V Zero Gate Voltage Drain Current T

J

= 25°C

Gate-Body Leakage Current

I

GSS

⎯ ⎯

±100

nA

V

DS

= 0V, V

GS

= ±12V

Gate Threshold Voltage

V

GS(th)

-0.6

⎯

-1.25 V

V

DS

= V

GS

, I

D

= -250μA

NEW PRODUCT

On State Drain Current (Note 5)

I

D (ON)

-15

⎯ ⎯

A

V

GS

= -4.5V, V

DS

= -5V

R

DS (ON)

⎯

51

82

94

80

110

130

mΩ

V

GS

= -4.5V, I

D

= -4.5A

V

GS

= -2.7V, I

D

= -3.8A

V

GS

= -2.5V, I

D

= -3.7A

Static Drain-Source On-Resistance (Note 5)

Forward Transconductance (Note 5)

g

FS

⎯

6.3

⎯

S

V

DS

= -10V, I

D

= -4.5A

Diode Forward Voltage (Note 5)

V

SD

⎯

0.79 -1.26 V

I

S

= -1.7A, V

GS

= 0V

Maximum Body-Diode Continuous Current (Note 1)

I

S

⎯ ⎯

1.7 A

⎯

DYNAMIC PARAMETERS (Note 6)

Total Gate Charge

Q

g

⎯

7.3

⎯

nC

V

GS

= -4.5V, V

DS

= -10V, I

D

= 4.5A

Gate-Source Charge

Q

gs

⎯

2.0

⎯

nC

V

GS

= -4.5V, V

DS

= -10V, I

D

= 4.5A

Gate-Drain Charge

Q

gd

⎯

1.9

⎯

nC

V

GS

= -4.5V, V

DS

= -10V, I

D

= 4.5A

Turn-On Delay Time

t

D(on)

⎯

12

⎯

ns

Turn-On Rise Time

t

r

⎯

20

⎯

ns

DMP2130LDM

Document number: DS31118 Rev. 6 - 2

2 of 4

www.diodes.com

May 2008

Turn-Off Delay Time

t

D(off)

⎯

38

⎯

ns

t

f

⎯

41

⎯

ns

V

DS

= -10V, V

GS

= -4.5V,

R

L

= 10Ω, R

G

= 6Ω

Turn-Off Fall Time

Input Capacitance

C

iss

⎯

443

⎯

pF

Output Capacitance

C

oss

⎯

125

⎯

pF

C

rss

⎯

98

⎯

pF

V

DS

= -16V, V

GS

= 0V

f = 1.0MHz

Reverse Transfer Capacitance

Notes: 5. Test pulse width t = 300μs.

6. Guaranteed by design. Not subject to production testing.

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

DS

-V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

GS

V = -5V

Pulsed

DS

DMP2130LDM

Fig. 4 Typical Total Capacitance

-V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

T

04 81216

-I , DRAIN CURRENT (A)

Fig. 3

D

On-Resistance vs. Drain Current and Gate Voltage

R , STATIC DRAIN-SOURCE ON-RESISTANCE ( )

DS(on)

Ω

V = -4.5V

GS

V = -10V

GS

V = -2.5V

GS

20

f = 1 MHz

V = 0V

GS

C

iss

C

oss

C

rss

NEW PRODUCT

-I = 250 A

D

µ

T , AMBIENT TEMPERATURE (C)

A

R , STATIC DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

Fig. 6 Normalized Static Drain-Source On-Resistance

vs. Ambient Temperature

V = -4.5V

I = -3.0A

GS

D

V = -10V

I = -3.5A

GS

D

V = -2.5V

I = -1.0A

GS

D

DMP2130LDM

Document number: DS31118 Rev. 6 - 2

3 of 4

www.diodes.com

May 2008

DMP2130LDM-7

DMP2130LDM-7

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