GSD2004S
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 16-May-13
1
Document Number: 85728
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual In-Series Small Signal High Voltage Switching Diode
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13” reel (8 mm tape), 10K/box
08/3K per 7” reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual in-series diode, especially
suited for applications requiring high voltage
capability
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Device on fiberglass substrate
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
GSD2004S
GSD2004S-E3-08 or GSD2004S-E3-18
Dual diodes serial DB6 Tape and reel
GSD2004S-HE3-08 or GSD2004S-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Continuous reverse voltage V
R
240 V
Peak repetitive reverse voltage V
RRM
300 V
Forward current (continuous) I
F
225 mA
Peak repetitive forward current I
FRM
625 mA
Non-repetitive peak forward current
t
p
= 1 μs I
FSM
4.0 A
t
p
= 1 s I
FSM
1.0 A
Power dissipation
(1)
P
tot
350 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Typical thermal resistance junction to
ambient air
(1)
R
thJA
357 °C/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
- 65 to + 150 °C
Operating temperature range T
op
- 55 to + 150 °C
