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80SQ045NRLG

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 3
1 Publication Order Number:
80SQ045N/D
80SQ045N
Preferred Device
Axial Lead Rectifier
These devices employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
• High Current Capability
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Stress Protection
• Low Forward Voltage
• High Surge Capacity
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from Case
• Polarity: Cathode indicated by Polarity Band
• ESD Protection: Human Body Model > 4000 V (Class 3)
Machine Model > 400 V (Class C)
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45 V
Average Rectified Forward Current T
L
= 75°C
(Psi
JL
= 12°C/W, P.C. Board Mounting, Note 2)
I
O
8.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
140 A
Operating and Storage Junction Tempera-
ture Range (Reverse Voltage Applied)
T
J
, T
stg
−65 to +125 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10 V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIER
8.0 AMPERES
Preferred devices are recommended choices for future use
and best overall value.
80SQ045N Axial Lead* 500 Units/Box
80SQ045NRL Axial Lead*
MARKING DIAGRAM
80SQ
045N
YYWW G
G
YY = Year
WW = Work Week
G = Pb−Free Package
80SQ045NRLG Axial Lead* 1500/Tape & Ree
l
1500/Tape & Ree
l
80SQ045NG Axial Lead* 500 Units/Box
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
http://onsemi.com
80SQ045N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol
0.9 in x 0.9 in
Copper Pad Size
6.75 in x 6.75 in
Copper Pad Size
Unit
Thermal Resistance, Junction−to−Lead (See Note 2 − Mounting Data)
Thermal Resistance, Junction−to−Ambient (See Note 2 − Mounting Data)
R
q
JL
R
q
JA
13
50
12
40
°C/W
ELECTRICAL CHARACTERISTICS (T
L
= 25°C unless otherwise noted)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 8.0 A, T
L
= 25°C)
v
F
0.55
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)
T
L
= 25°C
T
L
= 100°C
i
R
1.0
50
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Figure 1. Typical Forward Voltage
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
30
10
1
0.80.70.60.50.40.30.20.1
Figure 2. Maximum Forward Voltage
0.1
Figure 3. Typical Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
1E−01
1E−02
1E−03
1E−04
35302510 201550
1E−06
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
I
R
, INSTANTANEOUS REVERSE CURRENT (AMPS)
504540
1E−05
125°C
25°C
100°C
75°C
125°C
25°C
100°C
75°C
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
30
10
1
0.
8
0.70.60.50.40.30.20.1
0.1
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
125°C
25°C
100°C
75°C
MBR845
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
f = 1 MHz
T
J
= 25°C
10
0
1010.1
C, CAPACITANCE (pF)
100
1000
10,000
80SQ045N
http://onsemi.com
3
R
q
JA
(°C/W)
Figure 5. R
q
JA
versus Copper Area
See Note 2
10420
COPPER AREA (sq in)
30
T
L
, LEAD TEMPERATURE (°C)
Figure 6. Current Derating − Lead
SQUARE
WAVE
14
0
40200
I
F
, AVERAGE FORWARD
CURRENT (AMPS)
0
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Forward Power Dissipation
T
J
= 125°C
10620
P
FO
, AVERAGE POWER
DISSIPATION (WATTS)
0
35
40
45
50
55
60
65
70
75
86
8060 100 120
1
2
3
4
5
6
7
8
9
dc
R
q
JL
= 12°C/W
48
0.5
1
1.5
2
2.5
3
3.5
4
4.5
SQUARE
WAVE
dc
NOTE 2 — MOUNTING DATA
Mounting Method
P.C. Board with 6.75 sq. in.
copper surface.
Board Ground Plane
L = 3/8,
0.1
t, TIME (sec)
1001.0
0.001
10
1
0.1
0.0001 0.1 1000
Figure 8. Thermal Response, Junction−to−Ambient
0.2
0.01
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.010.001
0.01
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.05
Copper Area = 0.271 sq. in.
R
q
JA
= 61.8 °C/W
P1-P3P4-P4

80SQ045NRLG

Mfr. #:
Buy 80SQ045NRLG
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 8A 45V
Lifecycle:
New from this manufacturer.
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