DZT5551-13 Datasheet DZT5551-13 | P4-P6

DZT5551

Document number: DS31219 Rev. 3 - 2

4 of 7

www.diodes.com

November 2012

DZT5551

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BV

CBO

180 270 — V

I

C

= 100µA, I

E

= 0

Collector-Emitter Breakdown Voltage (Note 7)

BV

CEO

160 200 — V

I

C

= 1mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

6.0 7.85 — V

I

E

= 100µA, I

C

= 0

Collector Cutoff Current

I

CBO

—

<1

—

50

nA

µA

V

CB

= 120V, I

E

= 0

V

CB

= 120V, I

E

= 0, T

A

= +100°C

Emitter Cutoff Current

I

EBO

— <1 50 nA

V

EB

= 4V, I

C

= 0

ON CHARACTERISTICS (Note 7)

Collector-Emitter Saturation Voltage

V

CE(sat)

—

65

115

150

200

mV

I

C

= 10mA, I

B

= 1mA

I

C

= 50mA, I

B

= 5mA

Base-Emitter Saturation Voltage

V

BE(sat)

—

760

840

1000

1200

mV

I

C

= 10mA, I

B

= 1mA

I

C

= 50mA, I

B

= 5mA

DC Current Gain

h

FE

80

30

130

145

65

—

250

—

I

C

= 1mA, V

CE

= 5V

I

C

= 10mA, V

CE

= 5V

I

C

= 50mA, V

CE

= 5V

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

f

T

100 130 300 MHz

V

CE

= 10V, I

C

= 10mA,

f = 100MHz

Small Signal Current Gain

h

fe

50 — 260 —

V

CE

= 10V, I

C

= 10mA,

f = 1kHz

Output Capacitance

C

obo

— — 6 pF

V

CB

= 10V, f = 1MHz

Noise Figure NF — — 8 dB

V

CE

= 5.0V, I

C

= 200µA,

R

S

= 1.0kΩ, f = 1.0kHz

Delay Time

t

(

d

)

— 95 — ns

V

CC

= 10V, I

C

= 10mA,

I

B1

= -I

B2

= 1mA

Rise Time

t

(

r

)

— 64 — ns

Storage Time

t

(

s

)

— 1256 — ns

Delay Time

t

(

f

)

— 140 — ns

Notes: 7. Pulse Test: Pulse width ≤ 300µs. Duty cycle ≤ 2.0%.

DZT5551

Document number: DS31219 Rev. 3 - 2

5 of 7

www.diodes.com

November 2012

DZT5551

Typical Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

1m 10m 100m

100m

1

10m 100m

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

100µ 1m 10m 100m

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1m 10m 100m

0.2

0.4

0.6

0.8

1.0

1.2

1m 10m 100m

0.4

0.6

0.8

1.0

0

50

100

150

200

V

CE(SAT)

v I

C

Tamb=25°C

I

C

/I

B

=50

I

C

/I

B

=20

I

C

/I

B

=10

V

CE(SAT)

(V)

I

C

Collector Current (A)

150°C

V

BE(SAT)

v I

C

I

C

/I

B

=10

100°C

25°C

-55°C

V

CE(SAT)

(V)

I

C

Collector Current (A)

150°C

h

FE

v I

C

Ta=25°C

V

CE

=5V

-55°C

25°C

100°C

Normalised Gain

I

C

Collector Current (A)

150°C

25°C

V

CE(SAT)

v I

C

I

C

/I

B

=10

100°C

-55°C

V

BE(SAT)

(V)

I

C

Collector Current (A)

150°C

V

BE(ON)

v I

C

V

CE

=5V

100°C

25°C

-55°C

V

BE(ON)

(V)

I

C

Collector Current (A)

Typical Gain (h

FE

)

DZT5551

Document number: DS31219 Rev. 3 - 2

6 of 7

www.diodes.com

November 2012

DZT5551

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT223

Dim Min Max Typ

A 1.55 1.65 1.60

A1 0.010 0.15 0.05

b1 2.90 3.10 3.00

b2 0.60 0.80 0.70

C 0.20 0.30 0.25

D 6.45 6.55 6.50

E 3.45 3.55 3.50

E1 6.90 7.10 7.00

e — — 4.60

e1 — — 2.30

L 0.85 1.05 0.95

Q 0.84 0.94 0.89

All Dimensions in mm

Dimensions Value (in mm)

X1 3.3

X2 1.2

Y1 1.6

Y2 1.6

C1 6.4

C2 2.3

A1

A

X2

C1

C2

X1

Y2

Y1

DZT5551-13

DZT5551-13

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