KSC2785YBU Datasheet KSC2785OTA, KSC2785OBU, KSC2785YBU | P1-P3

KSC2785

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 60 V

V

CEO

Collector-Emitter Voltage 50 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current 150 mA

P

C

Collector Power Dissipation 250 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=100µA, I

E

=0 60 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=10mA, I

B

=0 50 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=10µA, I

C

=0 5 V

I

CBO

Collector Cut-off Current V

CB

=40V, I

E

=0 0.1 µA

I

EBO

Emitter Cut-off Current V

EB

=3V, I

C

=0 0.1 µA

h

FE

DC Current Gain V

CE

=6V, I

C

=1.0mA 70 700

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=100mA, I

B

=10mA 0.15 0.3 V

f

T

Current Gain Bandwidth Product V

CE

=6V, I

C

=10mA 300 MHz

C

ob

Output Capacitance V

CB

=6V, I

E

=0, f=1MHz 2.5 pF

NF Noise Figure V

CE

=6, I

C

=0.5mA

f=1KHz, R

S

=500Ω

4.0 dB

Classification O Y G L

h

FE

70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700

KSC2785

Audio Frequency Amplifier & High

Frequency OSC.

• Complement to KSA1175

• Collector-Base Voltage : V

CBO

=60V

1.Emitter 2. Collector 3. Base

TO-92S

1

KSC2785

Rev. A2, September 2002

Typical Characteristics

Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage

Figure 3. DC Current Gain Figure 4. f

T

- I

C

Figure 5. Saturation Voltage Figure 6. Output Capacitance

048121620

0

20

40

60

80

100

I

B

= 350

µ

A

I

B

= 200

µ

A

I

B

= 100

µ

A

I

B

= 400

µ

A

I

B

= 300

µ

A

I

B

= 250

µ

A

I

B

= 150

µ

A

I

B

= 50

µ

A

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.1

1

10

100

V

CE

= 6V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

1 10 100 1000

10

100

1000

10000

V

CE

= 6V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

1

10

100

1000

V

CE

= 6V

f

T

[MHz], CURRENT GAIN BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

1 10 100 1000

10

100

1000

10000

I

C

= 10 I

B

V

BE

(sat)

V

CE

(sat)

V

BE

(sat), V

CE

(sat)[mV], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

1 10 100 1000

0.1

1

10

100

f = 1 MHz

I

E

= 0

C

ob

[pF], OUTPUT CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

4.00

±0.20

3.72

±0.20

2.86

±0.20

2.31

±0.20

3.70

±0.20

0.77

±0.10

14.47

±0.30

(1.10)

0.49

±0.10

1.27TYP

[1.27±0.20] [1.27±0.20]

1.27TYP

0.66 MAX.

0.35

+0.10

–0.05

TO-92S

Package Dimensions

KSC2785

Dimensions in Millimeters

KSC2785YBU

KSC2785YBU

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