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NCV8440ASTT3G

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 7
1 Publication Order Number:
NCV8440/D
NCV8440, NCV8440A
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
Features
• Diode Clamp Between Gate and Source
• ESD Protection − Human Body Model 5000 V
• Active Over−Voltage Gate to Drain Clamp
• Scalable to Lower or Higher R
DS(on)
• Internal Series Gate Resistance
• These are Pb−Free Devices
Benefits
• High Energy Capability for Inductive Loads
• Low Switching Noise Generation
Applications
• Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
Gate
(Pin 1)
Overvoltage
Protection
ESD Protection
www.onsemi.com
SOT−223
CASE 318E
STYLE 3
DRAIN
GATE
DRAIN
SOURCE
AYW
xxxxx G
G
A = Assembly Location
Y = Year
W = Work Week
xxxxx = V8440 or 8440A
G = Pb−Free Package
123
4
V
DSS
(Clamped)
R
DS(ON)
TYP I
D
MAX
52 V
95 mW @ 10 V
2.6 A
Source (Pin 3)
Drain (Pins 2, 4)
(Note: Microdot may be in either location)
1 = Gate
2 = Drain
3 = Source
MARKING
DIAGRAM
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
NCV8440, NCV8440A
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped V
DSS
52−59 V
Gate−to−Source Voltage − Continuous V
GS
±15 V
Drain Current
− Continuous @ T
A
= 25°C
− Single Pulse (t
p
= 10 ms) (Note 1)
I
D
I
DM
2.6
10
A
Total Power Dissipation @ T
A
= 25°C (Note 1) P
D
1.69 W
Operating and Storage Temperature Range T
J
, T
stg
−55 to 150 °C
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 50 V, I
D(pk)
= 1.17 A, V
GS
= 10 V, L = 160 mH, R
G
= 25 W)
E
AS
110 mJ
Load Dump Voltage (V
GS
= 0 and 10 V, R
I
= 2.0 W, R
L
= 9.0 W, td = 400 ms)
V
LD
60 V
Thermal Resistance,
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
R
q
JA
R
q
JA
74
169
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in
2
).
2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in
2
).
DRAIN
SOURCE
GATE
VDS
VGS
I
D
I
G
+
−
+
−
Figure 1. Voltage and Current Convention
NCV8440, NCV8440A
www.onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 V, I
D
= 1.0 mA, T
J
= 25°C)
(V
GS
= 0 V, I
D
= 1.0 mA, T
J
= −40°C to 125°C) (Note 4)
Temperature Coefficient (Negative)
V
(BR)DSS
52
50.8
55
54
−9.3
59
59.5
V
V
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 40 V, V
GS
= 0 V)
(V
DS
= 40 V, V
GS
= 0 V, T
J
= 125°C) (Note 4)
I
DSS
10
25
mA
Gate−Body Leakage Current
(V
GS
= ±8 V, V
DS
= 0 V)
(V
GS
= ±14 V, V
DS
= 0 V)
I
GSS
±35
±10
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 100 mA)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.1 1.5
−4.1
1.9 V
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 3.5 V, I
D
= 0.6 A)
(V
GS
= 4.0 V, I
D
= 1.5 A)
(V
GS
= 10 V, I
D
= 2.6 A)
R
DS(on)
150
135
95
180
160
110
mW
Forward Transconductance (Note 3) (V
DS
= 15 V, I
D
= 2.6 A) g
FS
3.8 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
V
DS
= 35 V, V
GS
= 0 V,
f = 10 kHz
C
iss
155
pF
Output Capacitance C
oss
60
Transfer Capacitance C
rss
25
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 10 kHz
C
iss
170
pF
Output Capacitance C
oss
70
Transfer Capacitance C
rss
30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Not subject to production testing.
5. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6P7-P9

NCV8440ASTT3G

Mfr. #:
Buy NCV8440ASTT3G
Manufacturer:
ON Semiconductor
Description:
Gate Drivers 2.6A, 52V N-CH, CLAM
Lifecycle:
New from this manufacturer.
Delivery:
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