IRF3415S/L
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.042 Ω V
GS
= 10V, I
D
= 22A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 19 ––– ––– S V
DS
= 50V, I
D
= 22A
––– ––– 25
µA
V
DS
= 150V, V
GS
= 0V
––– ––– 250 V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 200 I
D
= 22A
Q
gs
Gate-to-Source Charge ––– ––– 17 nC V
DS
= 120V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 98 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 12 ––– V
DD
= 75V
t
r
Rise Time ––– 55 ––– I
D
= 22A
t
d(off)
Turn-Off Delay Time ––– 71 ––– R
G
= 2.5Ω
t
f
Fall Time ––– 69 ––– R
D
= 3.3Ω, See Fig. 10
Between lead,
––– –––
and center of die contact
C
iss
Input Capacitance ––– 2400 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 640 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 340 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
Starting T
J
= 25°C, L = 2.4mH
R
G
= 25Ω, I
AS
= 22A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
≤ 22A, di/dt ≤ 820A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF3415 data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Source-Drain Ratings and Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 22A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 260 390 ns T
J
= 25°C, I
F
= 22A
Q
rr
Reverse Recovery Charge ––– 2.2 3.3 µC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
43
150
A
