2SC4132 / 2SD1857
Transistors
1/1
Power Transistor (120V, 1.5A)
2SC4132 / 2SD1857
zFeatures
1) High breakdown voltage. (BV
CEO = 120V)
2) Low collector output capacitance.
(Typ. 20pF at V
CB = 10V)
3) High transition frequency. (f
T = 80MHz)
4) Complements the 2SB1236.
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
120
120
5
2
3
0.5
2
1
150
−55 to +150
Unit
V
V
V
A
A
W
*
1
*
2
2SC4132
2SD1857
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
*
1 Single pulse Pw = 10ms
*
2 When mounted on a 40 × 40 × 0.7mm ceramic board.
zPackaging specifications and h
FE
Type 2SC4132
MPT3
PQR
CB
*
T100
1000
2SD1857
ATV
PQR
−
TV2
2500
*
Denotes h
FE
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
zExternal dimensions (Unit : mm)
ROHM : MPT3
EIAJ : SC-62
ROHM : ATV
2SD1857
2SC4132
1.5
(1) Base(Gate)
0.4
(2) Collector(Drain)
(3) Emitter(Source)
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(
3
)
4.5
(
1
)
(
2
)
0.5
4.0
2.5
1.0
0.45
(2) Collector
1.05
(3) Base
Taping specifications
(1) Emitter
0.5
(
1
)
0.65Max.
2.54
(
2
)
2.54
(
3
)
6.8
1.0
14.5
0.9
4.4
2.5
zElectrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
120
120
5
−
−
−
−
−
−
−
−
−
−
−
80
20
−
−
−
1
1
2
−
−
V
V
V
µA
µA
V
*
*
MHz
pF
I
C
= 50µA
I
C
= 1mA
I
E
= 50µA
V
CB
= 100V
V
EB
= 4V
I
C
/I
B
= 1A/0.1A
h
FE
82 − 390 −
V
CE
/I
C
= 5V/0.1A
V
CE
= 5V , I
E
= −0.1A , f = 30MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
DC current
transfer ratio
*
Measured using pulse current.
