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ZXM64P035L3

P1-P3P4-P4
SUMMARY
V
(BR)DSS
= -35V: R
DS(on)
= 0.075 : I
D
= -12A
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
·
Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· TO220 package
APPLICATIONS
·
100W Class D Audio Output Stage
·
Motor Control
DEVICE MARKING
·
ZXM6
4P035
ZXM64P035L3
ISSUE 1 - JUNE 2004
1
35V P-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE MULTIPLES
ZXM64P035L3 1000
ORDERING INFORMATION
Front View
ZXM64P035L3
ISSUE 1 - JUNE 2004
2
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DSS
-35 V
Gate-Source Voltage
V
GS
⫾20 V
Continuous Drain Current (V
GS
= -10V; T
C
=25°C)(a)
(V
GS
= -10V; T
A
=25°C)(b)
I
D
-12
-3.3
A
Pulsed Drain Current (b)
I
DM
-19 A
Continuous Source Current (Body Diode) (b)
I
S
-2.3 A
Pulsed Source Current (Body Diode)(b)
I
SM
-19 A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
20
160
W
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
1.5
12
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL VALUE UNIT
Junction to Case (a)
R
θJC
6.25 °C/W
Junction to Ambient (b)
R
θJA
83.3 °C/W
THERMAL RESISTANCE
ZXM64P035L3
ISSUE 1 - JUNE 2004
3
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-35 V
I
D
=-250µA, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1 ␮A
V
DS
=-35V, V
GS
=0V
Gate-Body Leakage
I
GSS
⫾100 nA
V
GS
=⫾20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0 V
I
D
=-250␮A, V
DS
=V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.075
0.105
⍀
⍀
V
GS
=-10V, I
D
=-2.4A
V
GS
=-4.5V, I
D
=-1.2A
Forward Transconductance (1)(3)
g
fs
2.3 S
V
DS
=-10V,I
D
=-1.2A
DYNAMIC (3)
Input Capacitance
C
iss
825 pF
V
DS
=-25V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
250 pF
Reverse Transfer Capacitance
C
rss
80 pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
4.4 ns
V
DD
=-15V, I
D
=-2.4A
R
G
=6.0⍀, V
GS
=-10V
Rise Time
t
r
6.2 ns
Turn-Off Delay Time
t
d(off)
40 ns
Fall Time
t
f
29.2 ns
Total Gate Charge
Q
g
46 nC
V
DS
=-24V,V
GS
=-10V,
I
D
=-2.4A
Gate-Source Charge
Q
gs
9nC
Gate-Drain Charge
Q
gd
11.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95 V
T
J
=25⬚C, I
S
=-2.4A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
30.2 ns
T
J
=25⬚C, I
F
=-2.4A,
di/dt= 100A/␮s
Reverse Recovery Charge (3)
Q
rr
27.8 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width=300␮s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
P1-P3P4-P4

ZXM64P035L3

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IGBT Transistors MOSFET 35V P-Chnl
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