DocID13866 Rev 6 7/18
ST2S06 Electrical characteristics
18
V
IN_SW
= V
IN_A
= 5 V, V
O1,2
=1.2 V, C
1
= 4.7 µF, C
2
= C
3
= 22 µF, L1 = L2 = 3.3 µH,
T
J
= -30 to 125 °C unless otherwise specified. Typical values are referred to 25 °C.
Table 7. Electrical characteristics for the ST2S06B
Symbol Parameter Test conditions Min. Typ. Max. Unit
FB
1,2
Feedback voltage 784 800 816 mV
I
FB1,2
V
FB
pin bias current V
FB
= 1 V 600 nA
I
Q
Quiescent current
V
INH
> 1.2 V, V
FB
= 1 V 1 mA
V
INH
< 0.4 V 1 µA
I
O1,2
Output current V
IN
= 2.5 to 5.5 V
(1)
0.8 A
I
MIN
Minimum output current 1 mA
V
INH
Inhibit threshold
2.5V < V
IN
< 5 V 1.2
2.5V < V
IN
< 5.5 V 1.3
V
Device OFF 0.4
I
INH1,2
Inhibit pin current 2 µA
%V
O1,2
/
V
IN
Reference line regulation 2.5V < V
IN
< 5.5 V 0.032
%V
O
/
V
IN
V
O1,2
Reference load regulation 10 mA < I
O
< 0.5 A 5.5 15 mV
PWM f
S
PWM switching
frequency
(1)
V
FB
= 0.7 V, T
A
= 25°C 1.2 1.5 1.8 MHz
D
MAX
Maximum duty cycle V
FB
= 0.7 V, T
A
= 25°C 85 94 %
I
SWL
Switching current limitation 1 1.2 A
I
LKN
NMOS leakage current V
FB
= 0.9 V, T
A
= 25°C 0.1 µA
I
LKP
PMOS leakage current V
FB
= 0.9 V, T
A
= 25°C 0.1 µA
R
DSon
-N NMOS switch on resistance I
SW
= 250 mA 0.15 0.3 W
R
DSon
-P PMOS switch on resistance I
SW
= 250 mA 0.2 0.4 W
Efficiency
I
O
= 20 mA to 100 mA 75 %
I
O
= 100 mA to 0.5 A 90 %
T
SHDN
Thermal shut down
(2)
130 150 °C
T
HYS
Thermal shut down
hysteresis
(1)
15 °C
V
O1,2
/I
O
Load transient response
(1)
100 mA < I
O
< 500 mA,
t
R
= t
F
1 => 100 ns, T
A
= 25°C
-5 +5 %V
O
1. V
O
= 90% of nominal value.
2. Guaranteed by design, but not tested in production.
