www.vishay.com Document Number: 70062
4 S11-0933-Rev. J, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG408, DG409
Vishay Siliconix
Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. R
DS(on)
= R
DS(on)
max. - R
DS(on)
min.
h. Worst case isolation occurs on channel 4 due to proximity to the drain pin.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
(Single Supply)
PARAMETER SYMBOL
TEST CONDITIONS UNLESS
OTHERWISE SPECIFIED
TEMP.
b
TYP.
c
D SUFFIX
- 40 °C to 85 °C
UNIT
V+ = 12 V, V- = 0 V
MIN.
d
MAX.
d
V
AL
= 0.8 V, V
AH
= 2.4 V
f
Analog Switch
Drain-Source
On-Resistance
e, f
R
DS(on)
V
D
= 3 V, 10 V, I
S
= - 1 mA Room 90 - -
Dynamic Characteristics
Switching Time of
Multiplexer
e
t
TRANS
V
S1
= 8 V, V
S8
= 0 V, V
IN
= 2.4 V Room 180 - -
ns
Enable Turn-On Time
e
t
ON(EN)
V
INH
= 2.4 V, V
INL
= 0 V,
V
S1
= 5 V
Room 180 - -
Enable Turn-Off Time
e
t
OFF(EN)
Room 120 - -
Charge Injection
e
QC
L
= 1 nF, V
S
= 0 V, R
S
= 0 Room 5 - - pC
