www.vishay.com Document Number: 91082
4 S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
Fig. 6 - Typical Transconductance vs. Drain Current
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Breakdown Voltage vs. Temperature
Fig. 9 - Normalized On-Resistance vs. Temperature
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
4.0
g
fs
,Transconductance (S)
I
D
,
Drain Current (A)
- 1 - 2 - 3 - 4 - 5
0
T
J
= 25
°
C
T
J
= - 55
°
C
91082_06
T
J
= 125
°
C
80 µs Pulse Test
V
DS
> I
D(on)
x R
DS(on)
max.
3.2
2.4
1.6
0.8
0.0
T
J
= 25 °C
T
J
= 150 °C
- 20
V
SD
, Source-to-Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
- 2.0
- 6.8
- 5.6- 4.4- 3.2
91082_07
- 0.1
- 0.2
- 1.0
- 2
- 5
- 10
- 8.0
- 0.5
91082_08
T
J
, Junction Temperature (°C)
BV
DSS
, Drain-to-Source Breakdown
1.25
Voltage (Normalized)
1.15
0.75
0.85
0.95
1.05
- 40
160
120
80400
91082_09
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
2.5
(Normalized)
2.0
0.0
0.5
1.0
1.5
- 40
160
12080400
I
D
= - 1.0 A
V
GS
= - 10 V
91082_10
V
DS
, Drain-to-Source Voltage (V)
C, Capacitance (pF)
500
0
100
200
300
400
0 - 50- 40- 30- 20
- 10
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+
C
gs
, C
gd
C
gs
+ C
gd
≈ C
gs
+ C
gd
Q
G
, Total Gate Charge (nC)
Negative V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
04 16128
V
DS
= - 40 V
V
DS
= - 60 V
For test circuit
see figure 18
V
DS
= - 100 V
91082_11
I
D
= - 3.5 A
20