54-94-104MT..KPbF Series
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Vishay Semiconductors
Revision: 14-Jan-14
4
Document Number: 94351
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Fig. 1 - Current Ratings Characteristic Fig. 2 - Forward Voltage Drop Characteristics
Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
90
80
70
60
110
100
120
130
Maximum Allowable Case
Temperature (°C)
RMS Output Current (A)
10 20
50
60
30 40
0
54MT..K Series
Device fully turned-on
Per single AC switch
For all conduction angles
I
RMS
~
1
10
100
1000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
1
5
6
234
0
T
J
= 25 °C
T
J
= 125 °C
54MT..K Series
Per junction
50
0
250
200
350
300
150
100
Maximum Total Power Loss (W)
(Per Total Module)
RMS Output Current (A)
10 20
60
30 40 50
0
180°
120°
90°
60°
30°
54MT..K Series
T
J
= 125 °C
Device fully
turned-on
Conduction angle
Ø
Ø
0
50
350
300
250
200
150
100
Maximum Total Power Loss (W)
(Per Total Module)
Maximum Allowable Ambient
Temperature (°C)
100
125
25 50 75
0
0.1 K/W
0.2 K/W
0.3 K/W
0.5 K/W
0.7 K/W
1.0 K/W
2.0 K/W
R
thSA
= 0.05 K/W - ΔR
325
350
300
275
250
225
200
175
150
Peak Half Sine Wave
On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10
100
1
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated V
RRM
applied following surge.
54MT..K Series
Per junction
Initial T
J
= 125 °C
350
300
250
200
150
400
Peak Half Sine Wave
On-State Current (A)
Pulse Train Duration (s)
0.1
1
0.01
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
54MT..K Series
Per junction
No voltage reapplied
Rated V
RRM
reapplied
Initial T
J
= 125° C
