54-94-104MT..KPbF Series
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Vishay Semiconductors
Revision: 14-Jan-14
3
Document Number: 94351
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Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 104MT160KBS90
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS 54MT.K 94MT.K 104MT.K UNITS
RMS isolation voltage V
INS
T
J
= 25 °C all terminal shorted
f = 50 Hz, t = 1 s
4000 V
Maximum critical rate of rise of
off-state voltage
dV/dt
(1)
T
J
= T
J
maximum, linear to 0.67 V
DRM
,
gate open circuit
500 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS 54MT.K 94MT.K 104MT.K UNITS
Maximum peak gate power P
GM
T
J
= T
J
maximum
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative
gate voltage
- V
GT
10
V
Maximum required DC gate
voltage to trigger
V
GT
T
J
= 40 °C
Anode supply = 6 V, resistive
load
4.0
T
J
= 25 °C 2.5
T
J
= 125 °C 1.7
Maximum required DC gate
current to trigger
I
GT
T
J
= -40 °C 270
mAT
J
= 25 °C 150
T
J
= 125 °C 80
Maximum gate voltage
that will not trigger
V
GD
T
J
= T
J
maximum, rated V
DRM
applied
0.25 V
Maximum gate current
that will not trigger
I
GD
6mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 54MT.K 94MT.K 104MT.K UNITS
Maximum junction operating
and storage temperature range
T
J
, T
Stg
-40 to 125 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation per single AC switch 0.52 0.39 0.34
K/W
DC operation per junction 1.05 0.77 0.69
180 °C sine cond. angle per single AC switch 0.56 0.40 0.36
180 °C sine cond. angle per junction 1.12 0.80 0.72
Maximum thermal resistance,
case to heatsink
R
thCS
Per module
Mounting surface smooth, flat and grased
0.03
Mounting
torque ± 100 %
to heatsink A mounting compound is recommended and
the torque should be rechecked after a
period of 3 hours to allow for the spread of
the
compound. Lubricated threads.
4 to 6
Nm
to terminal 3 to 4
Approximate weight 225 g
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
54MT.K 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236
K/W94MT.K 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100
104MT.K 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082
