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S1FLB-GS08

P1-P3P4-P6P7-P7
S1FLB, S1FLD, S1FLG, S1FLJ, S1FLK, S1FLM
www.vishay.com
Vishay Semiconductors
Rev.1.1, 29-Mar-18
1
Document Number: 81820
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Recovery Rectifier, High Voltage Surface Mount
DESIGN SUPPORT TOOLS
FEATURES
• For surface mounted applications
• Low profile package
• Ideal for automated placement
• Glass passivated
• High temperature soldering: 260 °C / 10 s at
terminals
• Wave and reflow solderable
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SMF (DO-219AB)
Polarity: band denotes cathode end
Weight: approx. 15 mg
Packaging codes / options:
GS18/10K per 13" reel (8 mm tape), 50K/box
GS08/3K per 7" reel (8 mm tape), 30K/box
Circuit configuration: single
Note
(1)
Averaged over any 20 ms period
1
2
23020
eSMP
®
Series
SMF (DO-219AB)
23019
click logo to get started
Available
Models
PARTS TABLE
PART ORDERING CODE MARKING REMARKS
S1FLB S1FLB-GS18 or S1FLB-GS08 FB Tape and reel
S1FLD S1FLD-GS18 or S1FLD-GS08 FD Tape and reel
S1FLG S1FLG-GS18 or S1FLG-GS08 FG Tape and reel
S1FLJ S1FLJ-GS18 or S1FLJ-GS08 FJ Tape and reel
S1FLK S1FLK-GS18 or S1FLK-GS08 FK Tape and reel
S1FLM S1FLM-GS18 or S1FLM-GS08 FM Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage
S1FLB V
RRM
100 V
S1FLD V
RRM
200 V
S1FLG V
RRM
400 V
S1FLJ V
RRM
600 V
S1FLK V
RRM
800 V
S1FLM V
RRM
1000 V
Maximum RMS voltage
S1FLB V
RMS
70 V
S1FLD V
RMS
140 V
S1FLG V
RMS
280 V
S1FLJ V
RMS
420 V
S1FLK V
RMS
560 V
S1FLM V
RMS
700 V
Maximum DC blocking voltage
S1FLB V
DC
100 V
S1FLD V
DC
200 V
S1FLG V
DC
400 V
S1FLJ V
DC
600 V
S1FLK V
DC
800 V
S1FLM V
DC
1000 V
Maximum average forward rectified current
T
L
= 75 °C I
F(AV)
1.5 A
T
A
= 65 °C
(1)
I
F(AV)
0.7 A
Peak forward surge current 8.3 ms single half sine-wave T
L
= 25 °C I
FSM
22 A
S1FLB, S1FLD, S1FLG, S1FLJ, S1FLK, S1FLM
www.vishay.com
Vishay Semiconductors
Rev.1.1, 29-Mar-18
2
Document Number: 81820
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Mounted on epoxy substrate with 3 mm x 3 mm Cu pads ( 40 μm thick)
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
180 K/W
Operating junction and storage temperature range T
j
, T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Maximum instantaneous forward
voltage
1 A
(1)
S1FLB V
F
1.1 V
S1FLD V
F
1.1 V
S1FLG V
F
1.1 V
S1FLJ V
F
1.1 V
S1FLK V
F
1.1 V
S1FLM V
F
1.1 V
Maximum DC reverse current at rated
DC blocking voltage
T
A
= 25 °C
S1FLB I
R
10 μA
S1FLD I
R
10 μA
S1FLG I
R
10 μA
S1FLJ I
R
10 μA
S1FLK I
R
10 μA
S1FLM I
R
10 μA
T
A
= 125 °C
S1FLB I
R
50 μA
S1FLD I
R
50 μA
S1FLG I
R
50 μA
S1FLJ I
R
50 μA
S1FLK I
R
50 μA
S1FLM I
R
50 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
S1FLB t
rr
1800 ns
S1FLD t
rr
1800 ns
S1FLG t
rr
1800 ns
S1FLJ t
rr
1800 ns
S1FLK t
rr
1800 ns
S1FLM t
rr
1800 ns
Typical capacitance 4 V, 1 MHz
S1FLB C
j
4pF
S1FLD C
j
4pF
S1FLG C
j
4pF
S1FLJ C
j
4pF
S1FLK C
j
4pF
S1FLM C
j
4pF
S1FLB, S1FLD, S1FLG, S1FLJ, S1FLK, S1FLM
www.vishay.com
Vishay Semiconductors
Rev.1.1, 29-Mar-18
3
Document Number: 81820
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Typical Instantaneous Forward Characteristics
Fig. 3 - Typical Instantaneous Reverse Characteristics
Fig. 4 - Capacitance vs. Reverse Voltage
0
0.6
0.8
1.2
1.0
0 20 40 60 80 100 120 140 160
Average Forward Current (A)
Ambient Temperature (°C)
0.4
0.2
Resistiveorinductive load
3.0 mm x 3.0 mm 40 µm
thick copper pad areas
17375
100
1000
600 700 800 900 1000 1100
Instantaneous Forward Current (mA)
Instantaneous Forward Voltage (mV)
T
J
= 150 °C
T
J
=25 °C
T
J
= 100 °C
17376
InstantaneousReverse Current (µA)
InstantaneousReverse Voltage (V)
0 100 200 300 400 500 600 700 800 900
0.01
0.1
10
1
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
=75 °C
T
J
=50 °C
T
J
=25 °C
17377
V
R
(V)
C (pF)
0 5 10 15 20 25 30 35 40
10
9
8
7
6
5
4
3
2
1
0
17378
P1-P3P4-P6P7-P7

S1FLB-GS08

Mfr. #:
Buy S1FLB-GS08
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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