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V10150CHM3/4W

P1-P3P4-P5
V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
1
Document Number: 89154
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.63 at I
F
= 3 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5.0 A
V
RRM
150 V
I
FSM
60 A
V
F
at I
F
= 5 A 0.69 V
T
J
max. 150 °C
Package TO-220AB, TO-262AA
Diode variation Common cathode
PIN 1
PIN 2
PIN 3
K
VI10150C
TO-220AB
V10150C
1
2
3
PIN 1
PIN 2
CASE
PIN 3
TMBS
®
1
K
2
3
TO-262AA
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10150C VI10150C UNIT
Max. repetitive peak reverse voltage V
RRM
150 V
Max. average forward rectified current (fig. 1)
per device
I
F(AV)
10
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
60 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
2
Document Number: 89154
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 3 A
T
A
= 25 °C
V
F
(1)
0.82 -
V
I
F
= 5 A 0.99 1.41
I
F
= 3 A
T
A
= 125 °C
0.63 -
I
F
= 5 A 0.69 0.75
Reverse current per diode
V
R
= 100 V
T
A
= 25 °C
I
R
(2)
0.5 - μA
T
A
= 125 °C 0.5 - mA
V
R
= 150 V
T
A
= 25 °C - 100 μA
T
A
= 125 °C 1.0 10 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10150C VI10150C UNIT
Typical thermal resistance per diode R
JC
4.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V10150C-M3/4W 1.87 4W 50/tube Tube
TO-262AA VI10150C-M3/4W 1.45 4W 50/tube Tube
TO-220AB V10150CHM3/4W
(1)
1.87 4W 50/tube Tube
TO-262AA VI10150CHM3/4W
(1)
1.45 4W 50/tube Tube
V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
3
Document Number: 89154
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Case Temperature (°C)
Average Forward Rectified Current (A)
12
10
0
0 25 50 75 100 125 150 175
Resistive or Inductive Load
Mounted on Specific Heatsink
8
4
2
6
0
1
3
5
01 4 6
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
3
2
4
52
D = t
p
/T t
p
T
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.8 1.2 1.6
100
10
1
0.1
T
A
= 100 °C
T
A
= 25 °C
0.6 1.0
T
A
= 150 °C
T
A
= 125 °C
1.4
10 20 30 40
50
60 70 80 90 100
0.1
0.01
0.001
10
1
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.00001
0.0001
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
P1-P3P4-P5

V10150CHM3/4W

Mfr. #:
Buy V10150CHM3/4W
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers RECOMMENDED ALT 78-V20PW15CHM3/I
Lifecycle:
New from this manufacturer.
Delivery:
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