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VS-8CWH02FNTR-M3

P1-P3P4-P6P7-P7
VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 05-Oct-16
1
Document Number: 93261
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 2 x 4 AFRED Pt
®
FEATURES
• Hyperfast recovery time
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Q
rr
and
soft recovery
• Low leakage current
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
I
F(AV)
2 x 4 A
V
R
200 V
V
F
at I
F
0.71 V
t
rr
(typ.) 23 ns
T
J
max. 175 °C
Diode variation Common cathode
Base
common
cathode
Common
cathode
Anode Anode
2
1
2
3
TO-252AA (D-PAK)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current I
F(AV)
T
C
= 164 °C 8
A
Non-repetitive peak surge current per leg I
FSM
T
J
= 25 °C 80
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage per leg V
F
I
F
= 4 A - 0.87 0.95
I
F
= 8 A - 0.95 1.10
I
F
= 4 A, T
J
= 150 °C - 0.71 0.80
I
F
= 8 A, T
J
= 150 °C - 0.8 1.0
Reverse leakage current per leg I
R
V
R
= V
R
rated - - 4
μAT
J
= 125 °C, V
R
= V
R
rated - - 40
T
J
= 150 °C, V
R
= V
R
rated - - 80
Junction capacitance per leg C
T
V
R
= 200 V - 17 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 05-Oct-16
2
Document Number: 93261
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 23 27
nsT
J
= 25 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-20-
T
J
= 125 °C - 27 -
Peak recovery current I
RRM
T
J
= 25 °C - 2 -
A
T
J
= 125 °C - 3.4 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 20 -
nC
T
J
= 125 °C - 46 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case
per leg
R
thJC
-2.73.2
°C/W
per device - 1.35 1.6
Approximate weight
0.3 g
0.01 oz.
Marking device Case style TO-252AA (D-PAK) 8CWH02FN
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
1
10
100
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (μA)
50 100 150 200
0.0001
0.001
0.01
0.1
1
10
100
T
J
= 25 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
VS-8CWH02FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 05-Oct-16
3
Document Number: 93261
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
V
R
-
Reverse Voltage (V)
C
T
-
Junction Capacitance (pF)
0 50 100 150 200
10
100
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.5
D = 02
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance (°C/W)
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
0123456
150
155
160
165
170
175
180
DC
see note
(1)
Square wave (D = 0.50)
rated V
R
applied
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0 1 2 3 4 5 6
0
1
2
3
4
5
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
RMS Limit
DC
P1-P3P4-P6P7-P7

VS-8CWH02FNTR-M3

Mfr. #:
Buy VS-8CWH02FNTR-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers Hyperfast 2X4A 200V 23ns
Lifecycle:
New from this manufacturer.
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