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AUIRF4905

P1-P3P4-P6P7-P9P10-P11
AUIRF4905
HEXFET
®
Power MOSFET
AUTOMOTIVE GRADE
www.irf.com 1
11/10/10
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide
variety of other applications.
Description
GDS
Gate Drain Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T
A
)
is 25°C, unless otherwise specified.
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
- 55V
R
DS(on)
max.
0.02
Ω
I
D
-74A
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ -10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy(Thermally limited)
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
-5.0
-55 to + 175
300
10 lbf
in (1.1N m)
Max.
-74
-52
-260
mJ
°C
A
20
930
-38
200
1.3
± 20
TO-220AB
AUIRF4905
D
S
D
G
S
D
G
PD - 96338
AUIRF4905
www.irf.com 2
S
D
G
S
D
G
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 1.3mH R
G
= 25Ω, I
AS
= -38A. (See Figure 12)
I
SD
≤ -38A, di/dt ≤ -270A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e -55 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Volta
g
e Temp. Coefficient ––– -0.05 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.02
Ω
V
GS(th)
Gate Threshold Volta
g
e -2.0 ––– -4.0 V
g
fs Forward Transconductance 21 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– -25
A
––– ––– -250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 100 nA
Gate-to-Source Reverse Leaka
g
e––––––-100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Char
g
e––––––180
Q
gs
Gate-to-Source Char
g
e––––––32nC
Q
gd
Gate-to-Drain ("Miller") Char
g
e––––––86
t
d(on)
Turn-On Dela
y
Time ––– 18 –––
t
r
Rise Time ––– 99 –––
t
d(off)
Turn-Off Dela
y
Time ––– 61 ––– ns
t
f
Fall Time ––– 96 –––
L
D
Internal Drain Inductance Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 3400 –––
C
oss
Output Capacitance ––– 1400 –––
C
rss
Reverse Transfer Capacitance ––– 640 ––– pF
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Volta
g
e ––– ––– -1.6 V
t
rr
Reverse Recover
y
Time ––– 89 130 ns
Q
rr
Reverse Recover
y
Char
g
e ––– 230 350 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– ––– -74
––– ––– -260
–––
–––
–––
–––
4.5
7.5
V
GS
= -10V , See Fig.6 and 13
V
DD
= -28V
ID = -38A
R
G
= 2.5 Ω
T
J
= 25°C, I
S
=-38A , V
GS
= 0V
T
J
= 25°C, I
F
=-38A
di/dt = -100A/
µ
s
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -38A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= -25V, I
D
= -38A
I
D
= -38A
V
DS
= -44V
Conditions
R
D
=0.72 Ω See Fig. 10
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz, See Fig.5
V
GS
= 20V
V
GS
= -20V
AUIRF4905
www.irf.com 3
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
Moisture Sensitivity Level 3L-TO-220 N/A
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device Model
Class C5 (1125V)
(per AEC-Q101-005)
RoHS Compliant
Yes
ESD
Machine Model
Class M4 (425V)
(per AEC-Q101-002)
Human Body Model
Class H2 (4000V)
(per AEC-Q101-001)
P1-P3P4-P6P7-P9P10-P11

AUIRF4905

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Manufacturer:
Infineon Technologies
Description:
MOSFET AUTO -55V 1 P-CH HEXFET 20mOhms
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