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NTMD4N03R2G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 4
1 Publication Order Number:
NTMD4N03R2/D
NTMD4N03, NVMD4N03
Power MOSFET
4 A, 30 V, N−Channel SO−8 Dual
Features
• Designed for use in low voltage, high speed switching applications
• Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life
− R
DS(on)
= 0.048 W, V
GS
= 10 V (Typ)
− R
DS(on)
= 0.065 W, V
GS
= 4.5 V (Typ)
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode is Characterized for Use in Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters
• Computers
• Printers
• Cellular and Cordless Phones
• Disk Drives and Tape Drives
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage − Continuous V
GS
"20 V
Drain Current
− Continuous @ T
A
= 25°C
− Single Pulse (tp ≤ 10 ms)
I
D
I
DM
4.0
12
Adc
Apk
Total Power Dissipation
@ T
A
= 25°C (Note 1)
P
D
2.0 W
Operating and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Single Pulse Drain−to−Source
Avalanche Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
Peak I
L
= 4.45 Apk, L = 8 mH,
R
G
= 25 W)
E
AS
80 mJ
Thermal Resistance
− Junction−to−Ambient (Note 1)
R
q
JA
62.5 °C/W
Maximum Lead Temperature for
Soldering Purposes for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s
N−Channel
http://onsemi.com
V
DSS
R
DS(ON)
Typ I
D
Max
30 V
48 mW @ V
GS
= 10 V
4.0 A
SOIC−8
SUFFIX NB
CASE 751
STYLE 11
MARKING DIAGRAM*
AND PIN ASSIGNMENT
E4N03 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
E4N03
AYWW G
G
1
8
1
8
S1 G1 S2 G2
D1 D1 D2 D2
*For additional marking information, refer to
Application Note AND8002/D.
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
Device Package Shipping
†
ORDERING INFORMATION
NTMD4N03R2G SOIC−8
(Pb−Free)
2500 / Tape &
Reel
D
S
G
D
S
G
NVMD4N03R2G* SOIC−8
(Pb−Free)
2500 / Tape &
Reel
NTMD4N03, NVMD4N03
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mA)
Temperature Coefficient (Positive)
V
(BR)DSS
30
−
−
32
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current
(V
GS
= ±20 Vdc, V
DS
= 0 Vdc)
I
GSS
− − 100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.9
4.2
3.0
−
Vdc
mV/°C
Static Drain−to−Source On−State Resistance
(V
GS
= 10 Vdc, I
D
= 4 Adc)
(V
GS
= 4.5 Vdc, I
D
= 2 Adc)
R
DS(on)
−
−
0.048
0.065
0.060
0.080
W
Forward Transconductance
(V
DS
= 3 Vdc, I
D
= 2 Adc)
g
FS
− 6.0 −
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 285 400 pF
Output Capacitance C
oss
− 95 135
Reverse Transfer Capacitance C
rss
− 35 70
SWITCHING CHARACTERISTICS (Notes 2 & 3)
Turn−On Delay Time
(V
DD
= 20 Vdc, I
D
= 2 A,
V
GS
= 10 V,
R
G
= 2 W)
t
d(on)
− 7.0 15
ns
Rise Time t
r
− 14 30
Turn−Off Delay Time t
d(off)
− 16 30
Fall Time t
f
− 10 20
Gate Charge
(V
DS
= 10 Vdc,
V
GS
= 10 Vdc,
I
D
= 3.5 A)
Q
T
− 8.0 16
nC
Q
1
− 1.1 −
Q
2
− 1.9 −
BODY−DRAIN DIODE RATINGS (Note 2)
Diode Forward On−Voltage (I
S
= 2 Adc, V
GS
= 0 V)
(I
S
= 2 Adc, V
GS
= 0 V, T
J
= 150°C)
V
SD
−
−
0.82
0.63
1.0
−
Vdc
Reverse Recovery Time
(I
S
= 2 A, V
GS
= 0 V,
dI
S
/dt = 100 A/ms)
t
rr
− 14 −
ns
t
a
− 10 −
t
b
− 4.0 −
Reverse Recovery Stored Charge
(I
S
= 2 A, dI
S
/dt = 100 A/ms, V
GS
= 0 V)
Q
RR
− 0.008 −
mC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
NTMD4N03, NVMD4N03
http://onsemi.com
3
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
1.5
1.375
0.875
1.125
0.75
100
10
10,000
0 1.0
4
0.2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2
0.075
0.05
765
0.025
0
8
Figure 3. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
−50 0−25 5025
04215
0152010 305
2
6
8
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
150
I
D
= 2 A
V
GS
= 10 V
0.10
V
GS
= 3 V
V
GS
= 10
0.6
5
2
0
1
3
4
7
0.04
0.06
654
0.02
0
3
0.10
1000
T
J
= 25°C
T
J
= 25°C
0.4 0.8
10 V
8 V
4 V
3.6 V
3
34
T = 125°C
T = −55°C
T = 25°C
287
V
GS
= 4.5 V
V
GS
= 10 V
1
10075 125
1.25
25
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
4.5 V
5 V
6 V
6
0.08
P1-P3P4-P6P7-P8

NTMD4N03R2G

Mfr. #:
Buy NTMD4N03R2G
Manufacturer:
ON Semiconductor
Description:
MOSFET 30V 4A N-Channel
Lifecycle:
New from this manufacturer.
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