BAQ33, BAQ34, BAQ35
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Vishay Semiconductors
Rev. 1.9, 11-Jul-17
1
Document Number: 85537
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diodes, Low Leakage Current
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: MiniMELF (SOD-80)
Weight: approx. 31 mg
Cathode band color: black
Packaging codes / options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS18/10K per 13" reel (8 mm tape), 10K/box
FEATURES
• Silicon planar diodes
• Very low reverse current
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE
TYPE
MARKING
CIRCUIT CONFIGURATION REMARKS
BAQ33 V
RRM
= 40 V BAQ33-GS18 or BAQ33-GS08 - Single Tape and reel
BAQ34 V
RRM
= 70 V BAQ34-GS18 or BAQ34-GS08 - Single Tape and reel
BAQ35 V
RRM
= 140 V BAQ35-GS18 or BAQ35-GS08 - Single Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Repetitive peak reverse voltage
BAQ33 V
RRM
40 V
BAQ34 V
RRM
70 V
BAQ35 V
RRM
140 V
Reverse voltage
BAQ33 V
R
30 V
BAQ34 V
R
60 V
BAQ35 V
R
125 V
Peak forward surge current t
p
= 1 μs I
FSM
2A
Forward continuous current I
F
200 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
-65 to +175 °C
