TECHNICAL DATA SHEET
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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/510
T4-LDS-0197 Rev. 1 (110296) Page 1 of 5
DEVICES LEVELS
2N6249 2N6250 2N6251 JAN
2N6249T1 2N6250T1 2N6251T1 JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol
2N6249
2N6249T1
2N6250
2N6250T1
2N6251
2N6251T1
Unit
Collector-Emitter Voltage V
CEO
200 275 350 Vdc
Collector-Base Voltage V
CBO
300 375 450 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Collector Current I
C
10 Adc
Base Current I
B
5.0
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
P
T
6.0
175
W
Operating & Storage Junction Temperature T
op
, T
stg
-65 to +200 °C
Thermal Resistance, Junction-to-Case
R
θJC
1.0 °C/W
NOTES:
(1) Derate linearly at 34.2 mW/°C for T
A
> +25°C
(2) Derate linearly at 1.0 mW/°C for T
C
> +25°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 20mAdc; L = 42mH; f = 30 – 60Hz
(See Figure 10 of MIL-PRF-19500/510)
2N6249, T1
2N6250, T1
2N6251, T1
V
(BR)CEO
200
275
350
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 200mAdc; L = 14mH; f = 30 – 60Hz;
R
BE
= 50Ω
(See Figure 10 of MIL-PRF-19500/510)
2N6249, T1
2N6250, T1
2N6251, T1
V
(BR)CER
225
300
375
Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
I
EBO
100 µAdc
TO-3 (TO-204AA)
TO-254