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IR53H(D)420
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used
within the recommended conditions.
NOTE 2:
Care should be taken to avoid switching conditions where the V
S
node flies inductively below ground by more than 5V.
NOTE 3:
Enough current should be supplied to the V
CC
lead of the IC to keep the internal 15.6V zener diode clamping the
voltage at this lead.
Symbol Definition Minimum Maximum Units
V
B
High side floating supply absolute voltage V
o
+ 10 V
o
+ V
clamp
V
IN
High voltage supply —
500
V
O
Half-bridge output voltage
-3.0 (note 3) 500
I
D
Continuous drain current (T
A
= 25°C) —
0.7
-P2
—
0.85
(T
A
= 85°C)
— 0.5
-P2
—
0.6
(T
C
= 25°C)
-P2 — 1.2
I
CC
Supply current
(note 3)
5mA
T
A
Ambient temperature -40 125 °C
V
A
Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
T
= 1 nF and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are
referenced to COM.
MOSFET Characteristics
Symbol Definition Min. Typ. Max. Units Test Conditions
t
rr
Reverse recovery time (MOSFET body diode)
— 240
—
Q
rr
Reverse recovery charge (MOSFET body diode)
— 0.5
—
R
ds(on)
Static drain-to-source on resistance — 3.0 — Ω
V
SD
Diode forward voltage — 0.8 — V
Dynamic Characteristics
Symbol Definition Min. Typ. Max. Units Test Conditions
D RT duty cycle
—
50
—
% fosc = 20 kHz
tsd
Shutdown propagation delay — 660 — nsec
µC
di/dt =
100
A/µs
I
F
=700mA
