PSMN6R5-80PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 November 2010 6 of 15
NXP Semiconductors
PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V; T
j
= -55 °C 73 - - V
I
D
= 250 µA; V
GS
=0V; T
j
=25°C 80--V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=175°C;
see Figure 10; see Figure 11
1--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
; see Figure 11
--4.6V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
2.334V
I
DSS
drain leakage current V
DS
=80V; V
GS
=0V; T
j
=25°C - 0.3 10 µA
V
DS
=80V; V
GS
=0V; T
j
= 125 °C - - 150 µA
I
GSS
gate leakage current V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 10 100 nA
R
DSon
drain-source on-state resistance V
GS
=10V; I
D
=15A; T
j
=100°C;
see Figure 12
--11.5mΩ
V
GS
=10V; I
D
=15A; T
j
=175°C;
see Figure 12
- - 16.56 mΩ
V
GS
=10V; I
D
=15A; T
j
=25°C;
see Figure 13
[1]
-5.96.9mΩ
R
G
internal gate resistance (AC) f = 1 MHz - 0.75 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=0A; V
DS
=0V; V
GS
=10V - 61 - nC
I
D
=25A; V
DS
=40V; V
GS
=10V;
see Figure 14
; see Figure 15
-71-nC
Q
GS
gate-source charge - 19 - nC
Q
GS(th)
pre-threshold gate-source charge - 13.2 - nC
Q
GS(th-pl)
post-threshold gate-source
charge
-5.8-nC
Q
GD
gate-drain charge - 16 - nC
V
GS(pl)
gate-source plateau voltage I
D
=25A; V
DS
=40V; see Figure 15 -4.3-V
C
iss
input capacitance V
DS
=40V; V
GS
=0V; f=1MHz;
T
j
=25°C; see Figure 16
- 4461 - pF
C
oss
output capacitance - 410 - pF
C
rss
reverse transfer capacitance - 214 - pF
t
d(on)
turn-on delay time V
DS
=40V; R
L
=0.5Ω; V
GS
=10V;
R
G(ext)
=4.7Ω
-26-ns
t
r
rise time - 24 - ns
t
d(off)
turn-off delay time - 57 - ns
t
f
fall time - 22 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=15A; V
GS
=0V; T
j
=25°C;
see Figure 17
- 0.79 1.2 V
