FCX555
Da
tasheet Number: DS33058 Rev. 2 - 2
4 of 7
www.diodes.com
June 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-180 — — V
I
C
= -100µA
Collector-Emitter Breakdown Voltage
BV
CEV
-180 — — V
I
C
= -1µA, -0.3V < V
BE
< 1V
Collector-Emitter Breakdown Voltage
BV
CER
-180
— —
V
I
C
= -1µA, R
B
≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-150
— —
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.1
—
V
I
E
= -100µA
Collector Cutoff Current
I
CBO
—
—
<1
-
-20
-10
nA
µA
V
CB
= -144V
V
CB
= -144V, T
A
= +100°C
Emitter Cutoff Current
I
EBO
— <1 -20 nA
V
EB
= -6V
DC current transfer Static ratio (Note 10)
h
FE
100
100
—
—
300
—
I
C
= -10mA, V
CE
= -5V
I
C
= -100mA, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
—
—
—
—
-300
-400
mV
I
C
= -100mA, I
B
= -10mA
I
C
= -250mA, I
B
= -25mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
— —
-1000 mV
I
C
= -250mA, I
B
= -25mA
Base-Emitter Turn-on Voltage (Note 10)
V
BE(on)
— —
-950 mV
I
C
= -250mA, V
CE
= -5V
Transitional Frequency
f
T
— 100 — MHz
I
E
= -50mA, V
CE
= -10V
f = 100MHz
Output capacitance
C
obo
—
— 10 pF
V
CB
= -10V, f = 1MHz,
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
