IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTF200N10T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 60 96 S
C
iss
9400 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 1087 pF
C
rss
140 pF
t
d(on)
35 ns
t
r
31 ns
t
d(off)
45 ns
t
f
34 ns
Q
g(on)
152 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 50A 47 nC
Q
gd
47 nC
R
thJC
0.96 °C/W
R
thCH
0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 200 A
I
SM
Repetitive, Pulse Width Limited by T
JM
500 A
V
SD
I
F
= 50A, V
GS
= 0V, Note 1 1.0 V
t
rr
76 ns
Q
RM
205 nC
I
RM
5.4 A
Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 50A
R
G
= 3.3Ω (External)
I
F
= 100A, V
GS
= 0V,-di/dt = 100A/μs
V
R
= 50V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ISOPLUS i4-Pak
TM
(5-Lead)
(IXTF) Outline
Leads:
1. Gate;
2, 3. Source;
4, 5. Drain
6. Isolated.
All leads and tab are tin plated.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
