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CPC3902ZTR

P1-P3P4-P6
I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
DS-CPC3902-R03
1
CPC3902
250V N-Channel
Depletion-Mode FET
Part # Description
CPC3902ZTR SOT-223: Tape and Reel (1000/Reel)
CPC3902CTR SOT-89: Tape and Reel (1000/Reel)
BV
DSX
/
BV
DGX
R
DS(on)
(max)
I
DSS
(min) Package
250V 2.5 400mA SOT-89, SOT-223
Applications
Features
Description
Ordering Information
Circuit Symbol
• Current Regulator
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
• High Breakdown Voltage: 250V
• On-Resistance: 2.5 max. at 25ºC
• Low V
GS(off)
Voltage: -1.4 to -3.1V
• High Input Impedance
• Small Package Sizes: SOT-89, SOT-223
D
S
G
Package Pinout
D
G
D S
4
123
The CPC3902 is a 250V, N-channel, depletion-mode,
metal oxide semiconductor field effect transistor
(MOSFET) built upon a proprietary third generation
vertical DMOS process that realizes world-class,
high voltage performance in an economical silicon
gate process. This vertical DMOS process yields a
robust device with high input impedance for power
applications.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown, which makes the CPC3902 ideal for use
in high-power applications.
The CPC3902 is a highly reliable FET device that
has been used extensively in IXYS Integrated Circuits
Division’s Solid State Relays for industrial and
telecommunications applications.
The CPC3902 is available in the SOT-89 and the
SOT-223 package.
I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
2
R03
CPC3902
Absolute Maximum Ratings @ 25ºC
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter Ratings Units
Drain-to-Source Voltage 250 V
Gate-to-Source Voltage ±15 V
Pulsed Drain Current 400 mA
Total Package Dissipation
1
1.8 W
Operational Temperature -55 to +110 ºC
Junction Temperature, Maximum +125 ºC
Storage Temperature -55 to +125 ºC
1
Mounted on 1"x1" 2 oz. Copper FR4 board.
Parameter Symbol Conditions Min Typ Max Units
Drain-to-Source Breakdown Voltage BV
DSX
V
GS
= -5.5V, I
D
=100µA 250 - - V
Gate-to-Source Off Voltage V
GS(off)
V
DS
= 15V, I
D
=1A -1.4 - -3.1 V
Change in V
GS(off)
with Temperature dV
GS(off)
/dT V
DS
= 15V, I
D
=1A - - 4.5 mV/ºC
Gate Body Leakage Current I
GSS
V
GS
=±15V, V
DS
=0V - - 100 nA
Drain-to-Source Leakage Current I
D(off)
V
GS
= -5.5V, V
DS
=250V - - 1 µA
Saturated Drain-to-Source Current I
DSS
V
GS
= 0V, V
DS
=15V 400 - - mA
Static Drain-to-Source On-State Resistance R
DS(on)
V
GS
= 0V, I
D
=300mA, V
DS
=10V
- - 2.5
Change in R
DS(on)
with Temperature dR
DS(on)
/dT - - 2.5 %/ºC
Forward Transconductance G
fs
I
D
= 200mA, V
DS
= 10V 400 - - m
Input Capacitance C
ISS
V
GS
= -3.5V
V
DS
= 20V
f= 1MHz
-
230
-pFCommon Source Output Capacitance C
OSS
16
Reverse Transfer Capacitance C
RSS
9.5
Source-Drain Diode Voltage Drop V
SD
V
GS
= -5V, I
SD
=150mA - 0.72 1 V
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Typical values are characteristic of the device at +25°C, and
are the result of engineering evaluations. They are provided for
information purposes only, and are not part of the manufacturing
testing requirements.
Thermal Characteristics
Device
Parameter
Symbol Rating Units
CPC3902C (SOT-89)
Junction to Case
JC
50
ºC/W
Junction to Ambient
JA
90
CPC3902Z (SOT-223) Junction to Case
JC
14
Junction to Ambient
JA
55
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NTEGRATED
C
IRCUITS
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IVISION
CPC3902
www.ixysic.com
3
R03
PERFORMANCE DATA @ 25ºC (Unless Otherwise Noted)*
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please
contact our application department.
V
GS
(V)
-2.5 -2.0 -1.5 -1.0 -0.5 0.0
I
D
(mA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous Transfer Characteristics
(V
DS
=10V)
T
A
= 105ºC
T
A
= 25ºC
T
A
= -40ºC
Temperature (ºC)
-50 -25 0 25 50 75 100 125
V
GS
(V)
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
Threshold Voltage
(I
DS
=1PA)
I
D
(mA)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
G
m
(S)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Transconductance vs. Drain Current
(V
DS
=10V)
T
A
=-40ºC
T
A
=25ºC
T
A
=105ºC
Voltage (V)
0.1 1 10 100 1000
Current (A)
0.001
0.01
0.1
1
Forward Safe Operating Bias
(V
GS
=0V, DC Load)
Limited by
channel saturation
Limited by
device R
ON
V
DS
(V)
0123456
I
D
(A)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Output Characteristics
V
GS
=0V
V
GS
=-0.5V
V
GS
=-1V
V
GS
=-1.5V
V
GS
=-2V
Temperature (ºC)
-50 -25 0 25 50 75 100 125
On-Resistance (:)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
On-Resistance vs. Temperature
(V
GS
=0V, I
D
=300mA)
V
DS
(V)
0 5 10 15 20 25 30 35
Capacitance (pF)
0
50
100
150
200
250
300
350
400
Capacitance vs. Drain-Source Voltage
(V
GS
=-3.5V)
CISS
COSS
CRSS
I
D
(mA)
0.0 0.2 0.4 0.6 0.8 1.0
On-Resistance (:)
0
1
2
3
4
5
On-Resistance vs. Drain Current
(V
GS
=0V)
T
A
=105ºC
T
A
=25ºC
T
A
=-40ºC
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Blocking Voltage (V
P
)
280
290
300
310
320
330
Blocking Voltage
(V
GS
=-5V, I
L
=10PA)
Temperature (ºC)
-50 -25 0 25 50 75 100 125
Leakage Current (PA)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
Leakage Current vs. Temperature
(V
GS
=-5V, V
DS
=250V)
P1-P3P4-P6

CPC3902ZTR

Mfr. #:
Buy CPC3902ZTR
Manufacturer:
IXYS Integrated Circuits
Description:
MOSFET 250V N-Channel Depletion-Mode FET
Lifecycle:
New from this manufacturer.
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