WeEn Semiconductors
BT169D
SCR
BT169D All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 4 October 2016 3 / 11
Symbol Parameter Conditions Min Max Unit
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 0.32 A²s
dI
T
/dt rate of rise of on-state
current
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/µs - 50 A/µs
I
GM
peak gate current - 1 A
V
RGM
peak reverse gate
voltage
- 5 V
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
001aab446
0.4
0.2
0.6
0.8
P
tot
(W)
0
101
113
89
77
125
I
T(AV)
(A)
0 0.60.40.20.1 0.50.3
4
2.2
1.9
2.8
T
lead(max)
(°C)
a = 1.57
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
001aab449
1
0.5
1.5
2
I
T(RMS)
(A)
0
surge duration (s)
10
-2
10
-1
101
f = 50 Hz; T
lead
= 83 °C
Fig. 2. RMS on-state current as a function of surge
duration for sinusoidal currents
T
lead
(°C)
-50 1501000 50
001aab450
0.4
0.6
0.2
0.8
1
I
T(RMS)
(A)
0
83 °C
Fig. 3. RMS on-state current as a function of lead
temperature; maximum values
