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DG9263DY-T1-E3

P1-P3P4-P6P7-P9P10-P12
Vishay Siliconix
DG9262, DG9263
Document Number: 70862
S11-1229–Rev. D, 20-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low-Voltage Dual SPST Analog Switch
DESCRIPTION
The DG9262, DG9263 is a single-pole/single-throw
monolithic CMOS analog device designed for high
performance switching of analog signals. Combining low
power, high speed (t
ON
:35 ns, t
OFF
: 20 ns), low
on-resistance (R
DS(on)
: 40 ) and small physical size, the
DG9262, DG9263 is ideal for portable and battery powered
applications requiring high performance and efficient use of
board space.
The DG9262, DG9263 is built on Vishay Siliconix’s low
voltage BCD-15 process. Minimum ESD protection, per
Method 3015.7 is 2000 V. An epitaxial layer prevents
latchup. Break-before make is guaranteed for DG9262,
DG9263.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
BENEFITS
• Reduced Power Consumption
• Simple Logic Interface
• High Accuracy
• Reduce Board Space
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Voltage Operation (- 2.7 V to 5 V)
• Low On-Resistance - R
DS(on)
: 40
• Fast Switching - t
ON
: 35 ns, t
OFF
: 20 ns
• Low Leakage - I
COM(on)
: 200-pA max.
• Low Charge Injection - Q
INJ
: 1 pC
• Low Power Consumption
• TTL/CMOS Compatible
• ESD Protection > 2000 V (Method 3015.7)
• Available in MSOP-8 and SOIC-8
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Battery Operated Systems
• Portable Test Equipment
• Sample and Hold Circuits
• Cellular Phones
• Communication Systems
• Military Radio
• PBX, PABX Guidance and Control Systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic “0” 0.8 V
Logic “1” 2.4 V
Logic “0” 0.8 V
Logic “1” 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
TRUTH TABLE - DG9262
Logic Switch
0On
1Off
NC
1
V+
COM
1
IN
1
IN
2
COM
2
GND NC
2
1
2
3
4
8
7
6
5
Top View
TRUTH TABLE - DG9263
Logic Switch
0Off
1On
NO
1
V+
COM
1
IN
1
IN
2
COM
2
GND NO
2
1
2
3
4
8
7
6
5
Top View
ORDERING INFORMATION
Temp Range Package Part Number
- 40 °C to 85 °C
SOIC-8
DG9262DY-E3
DG9262DY-T1
DG9262DY-T1-E3
DG9263DY-E3
DG9263DY-T1
DG9263DY-T1-E3
MSOP-8
DG9262DQ-T1-E3
DG9263DQ-T1-E3
www.vishay.com
2
Document Number: 70862
S11-1229–Rev. D, 20-Jun-11
Vishay Siliconix
DG9262, DG9263
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 75 °C.
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Difference of min and max values.
g. Guraranteed by 5 V leakage testing, not production tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit Unit
Reference V+ to GND
- 0.3 to + 13
V
IN, COM, NC, NO
a
- 0.3 to (V+ + 0.3)
Continuous Current (Any Terminal)
± 20
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 40
ESD (Method 3015.7)
> 2000
V
Storage Temperature (D Suffix)
- 65 to 125
°C
Power Dissipation (Packages)
b
8-Pin Narrow Body SOIC
c
400
mW
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %, V
IN
= 0.8 V or 2.4 V
e
Temp.
a
D Suffix
- 40 °C to 85 °C
Unit Min.
b
Typ.
c
Max.
b
Analog Switch
Analog Signal Range
d
V
ANALOG
Full 0 3 V
Drain-Source On-Resistance
R
DS(on)
V
NO
or V
NC
= 1.5 V, V+ = 2.7 V
I
COM
= 5 mA
Room
Full
50 80
140
R
DS(on)
Match
d
R
DS(on)
V
NO
or V
NC
= 1.5 V
Room 0.4 2
R
DS(on)
Flatness
d
R
DS(on)
Flatness
V
NO
or V
NC
= 1 and 2 V
Room 4 8
NO or NC Off Leakage
Current
g
I
NO/NC(off)
V
NO
or V
NC
= 1 V/2 V, V
COM
= 2 V/1 V
Room
Full
- 100
- 5000
5 100
5000
pA
COM Off Leakage Current
g
I
COM(off)
V
COM
= 1 V/2 V, V
NO
or V
NC
= 2 V/1 V
Room
Full
- 100
- 5000
5 100
5000
Channel-On Leakage Current
g
I
COM(on)
V
COM
= V
NO
or V
NC
= 1 V/2 V
Room
Full
- 200
- 10 000
10 200
10 000
Digital Control
Input Current
I
INL
or I
INH
Full 1 µA
Dynamic Characteristics
Tur n - O n T i m e
t
ON
V
NO
or V
NC
= 1.5 V
Room
Full
50 120
200
ns
Turn-Off Time
t
OFF
Room
Full
20 50
120
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Room 1 5 pC
Off-Isolation OIRR
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room - 74
dB
Crosstalk
X
TAL K
Room - 90
NC and NO Capacitance
C
(off)
f = 1 MHz
Room 7
pFChannel-On Capacitance
C
COM(on)
Room 20
COM-Off Capacitance
C
COM(off)
Room 13
Power Supply
Power Supply Range V+ 2.7 12 V
Power Supply Current I+
V+ = 3.3 V, V
IN
= 0 V or 3.3 V
1µA
Document Number: 70862
S11-1229–Rev. D, 20-Jun-11
www.vishay.com
3
Vishay Siliconix
DG9262, DG9263
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Difference of min and max values.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %, V
IN
= 0.8 V or 2.4 V
e
Temp.
a
D Suffix
- 40 °C to 85 °C
Unit Min.
b
Typ.
c
Max.
b
Analog Switch
Analog Signal Range
d
V
ANALOG
Full 0 5 V
Drain-Source On-Resistance
R
DS(on)
V
NO
or V
NC
= 3.5 V, V+ = 4.5 V
I
COM
= 5 mA
Room
Full
30 60
75
R
DS(on)
Match
d
R
DS(on)
V
NO
or V
NC
= 3.5 V
Room 0.4 2
R
DS(on)
Flatness
f
R
DS(on)
Flatness
V
NO
or V
NC
= 1, 2 and 3 V
Room 2 6
NO or NC Off Leakage Current
I
NO/NC(off)
V
NO
or V
NC
= 1 V/4 V, V
COM
= 4 V/1 V
Room
Full
- 100
- 5000
10 100
5000
pACOM Off Leakage Current
I
COM(off)
V
COM
= 1 V/4 V, V
NO
or V
NC
= 4 V/1 V
Room
Full
- 100
- 5000
10 100
5000
Channel-On Leakage Current
I
COM(on)
V
COM
= V
NO
or V
NC
= 1 V/4 V
Room
Full
- 200
- 10 000
200
10 000
Digital Control
Input Current
I
INL
or I
INH
Full 1 µA
Dynamic Characteristics
Tu r n - O n T im e
t
ON
V
NO
or V
NC
= 3 V
Room
Full
35 75
150
ns
Turn-Off Time
t
OFF
Room
Full
20 50
100
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Room 2 5 pC
Off-Isolation OIRR
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room - 74
dB
Crosstalk
X
TA LK
Room - 90
NC and NO Capacitance
C
(off)
f = 1 MHz
Room 7
pFChannel-On Capacitance
C
D(on)
Room 20
COM-Off Capacitance
C
COM(off)
Room 13
Power Supply
Power Supply Range V+ 2.7 12 V
Power Supply Current I+
V+ = 5.5 V, V
IN
= 0 V or 5.5 V
1µA
P1-P3P4-P6P7-P9P10-P12

DG9263DY-T1-E3

Mfr. #:
Buy DG9263DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 78-DG9233EDY-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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