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IRFH5406TRPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 9
Features and Benefits
Features
Benefits
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Low RDSon (< 14.4 m
Ω
)
Lower Conduction Losses
Low Thermal Resistance to PCB (< 2.7°C/W)
Enables better thermal dissipation
100% Rg tested
Increased Reliability
results in
Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@ T
C(Bottom)
= 25°C
Power Dissipation
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
11
25
160
± 20
60
9
40
-55 to + 150
3.6
0.029
46
V
DS
60 V
R
DS(on) max
(@V
GS
= 10V)
14.4
m
Ω
Q
g (typical)
21
nC
R
G (typical)
1.1
Ω
I
D
(@T
c(Bottom)
= 25°C)
40 A
IRFH5406PbF
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 12, 2015
Form Quantity
IRFH5406TRPbF PQFN 5mm x 6mm Tape and Reel 4000
IRFH5406TR2PBF
PQFN 5mm x 6mm
Tape and Reel
400
EOL notice # 259
Orderable part number Package Type
Standard Pack
Note
2 www.irf.com© 2015 International Rectifier Submit Datasheet Feedback March 12, 2015
IRFH5406PbF
S
D
G
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
––– 2.7
R
θJC
(Top)
Junction-to-Case
––– 15
°C/W
R
θ
JA
Junction-to-Ambient
––– 35
R
θJA
(<10s)
Junction-to-Ambient
––– 22
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 11.4 14.4
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -8.6 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 27 ––– ––– S
Q
g
Total Gate Charge ––– 21 32
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 3.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.9 –––
Q
gd
Gate-to-Drain Charge ––– 6.5 –––
Q
godr
Gate Charge Overdrive ––– 9 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 8.4 –––
Q
oss
Output Charge ––– 7.4 ––– nC
R
G
Gate Resistance ––– 1.1
–––
Ω
t
d(on)
Turn-On Delay Time ––– 5.4 –––
t
r
Rise Time ––– 8.7 –––
t
d(off)
Turn-Off Delay Time ––– 12 –––
t
f
Fall Time ––– 3.5 –––
C
iss
Input Capacitance ––– 1256 –––
C
oss
Output Capacitance ––– 206 –––
C
rss
Reverse Transfer Capacitance ––– 92 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 20 30 ns
Q
rr
Reverse Recovery Charge ––– 74 111 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 30V
–––
V
GS
= 20V
V
GS
= -20V
––– ––– 160
––– ––– 40
Conditions
V
GS
= 0V, I
D
= 250uA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 24A
Conditions
Max.
45
24
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 24A, V
DD
= 30V
di/dt = 500A/μs
T
J
= 25°C, I
S
= 24A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
–––
R
G
=1.7
Ω
V
DS
= 25V, I
D
= 24A
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 24A
I
D
= 24A
V
GS
= 0V
V
DS
= 25V
V
DS
= V
GS
, I
D
= 50μA
V
GS
= 10V
Typ.
V
DS
= 60V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DD
= 30V, V
GS
= 10V
3 www.irf.com© 2015 International Rectifier Submit Datasheet Feedback March 12, 2015
IRFH5406PbF
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
2 3 4 5 6 7 8 9 10
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 25V
≤
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 24A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.00V
5.50V
5.00V
4.50V
4.00V
BOTTOM 3.75V
≤
60μs
PULSE WIDTH
Tj = 25°C
3.75V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.00V
5.50V
5.00V
4.50V
4.00V
BOTTOM 3.75V
≤
60μs
PULSE WIDTH
Tj = 150°C
3.75V
0 5 10 15 20 25 30
Q
G
,
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 48V
V
DS
= 30V
VDS= 12V
I
D
= 24A
P1-P3P4-P6P7-P9

IRFH5406TRPBF

Mfr. #:
Buy IRFH5406TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC
Lifecycle:
New from this manufacturer.
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