R07DS1093EJ0200_RJH60A83RD Preliminary
R07DS1093EJ0200 Rev.2.00 Page 4 of 8
Mar 24, 2015
10
8
6
4
2
0
40
30
20
10
0
Typical Transfer Characteristics
Collector Current I
C
(A)
0 4 8 12 16 20
V
CE
= 10 V
Pulse Test
Gate to Emitter Voltage V
GE
(V)
25°C
Tc = 150°C
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
−25 0 25 75 12550 100 150
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Case Temparature Tc (
°
C)
10 A
5 A
I
C
= 20 A
1
4
2
5
3
V
GE
= 15 V
Pulse Test
1
3
2
4
6
5
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
81012 181614 20
3
2
4
6
5
I
C
= 20 A
10 A
I
C
= 20 A
10 A
Tc = 25
°
C
Pulse Test
1
81012 181614
20
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
Tc = 150
°
C
Pulse Test
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
−25 0 25 75 12550 100 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
V
CE
= 10 V
Pulse Test
Case Temparature Tc (°C)
1 mA
I
C
= 10 mA
Frequency Characteristics (Typical)
Collector Current I
C(RMS)
(A)
Frequency f (kHz)
6
5
4
3
2
1
0
1 10010 1000
Tj = 125°C, Tc = 90°C
V
CE
= 300 V, V
GE
= 15 V
Rg = 5 Ω, duty = 50%
0
Collector current wave
(Square wave)
