Publication Order Number:
NTF3055L108/D
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 9
1
NTF3055L108,
NVF3055L108
Power MOSFET
3.0 A, 60 V, Logic Level, N−Channel
SOT−223
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Features
• NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
≤ 10 ms)
V
GS
± 15
± 20
Vdc
Vpk
Drain Current
− Continuous @ T
A
= 25°C (Note 1)
− Continuous @ T
A
= 100°C (Note 2)
− Single Pulse (t
p
≤ 10 ms)
I
D
I
D
I
DM
3.0
1.4
9.0
Adc
Apk
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Derate above 25°C
P
D
2.1
1.3
0.014
Watts
Watts
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55
to 175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L(pk)
= 7.0 Apk, L = 3.0 mH, V
DS
= 60 Vdc)
E
AS
74 mJ
Thermal Resistance
−Junction−to−Ambient (Note 1)
−Junction−to−Ambient (Note 2)
R
q
JA
R
q
JA
72.3
114
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 1 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2 oz. (Cu. Area 0.272 in
2
).
D
G
S
1
2
3
4
3.0 A, 60 V
R
DS(on)
= 120 mW
N−Channel
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAM
AYW
3055LG
G
3055L = Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
321
4
Gate Drain Source
Drain
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
www.
onsemi.com