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SI3493BDV-T1-GE3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 74478
S09-1399-Rev. B, 20-Jul-09
Vishay Siliconix
Si3493BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0
10
0.001
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
T
J
= 25 °C
0.01
0.1
1
0.0
0.2
0.4
0.6
0.
8
1.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)
V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.000
0.020
0.030
0.050
0.060
012345
I
D
= 7 A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
A
= 125 °C
T
A
= 25 °C
0
12
20
4
8
Power (W)
Time (s)
16
1 100 6001010
-1
10
-2
10
-3
T
A
= 25 °C
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.001
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
0.01
10 ms
100 ms
DC
Limited by R
DS(on)*
1 s
10 s
Document Number: 74478
S09-1399-Rev. B, 20-Jul-09
www.vishay.com
5
Vishay Siliconix
Si3493BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
Power Derating
0
1
2
3
4
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 74478
S09-1399-Rev. B, 20-Jul-09
Vishay Siliconix
Si3493BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74478
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
00601110
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9P10-P11

SI3493BDV-T1-GE3

Mfr. #:
Buy SI3493BDV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V
Lifecycle:
New from this manufacturer.
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