August 1996
NDP7051 / NDB7051
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
________________________________________________________________________________
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter NDP7051 NDB7051 Units
V
DSS
Drain-Source Voltage 50 V
V
DGR
Drain-Gate Voltage (R
GS
< 1 MΩ)
50 V
V
GSS
Gate-Source Voltage - Continuous ± 20 V
- Nonrepetitive (t
P
< 50 µs) ± 40
I
D
Drain Current - Continuous 70 A
- Pulsed 210
P
D
Maximum Power Dissipation @ T
C
= 25°C
130 W
Derate above 25°C 0.87 W/°C
T
J
,T
STG
Operating and Storage Temperature Range -65 to 175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275 °C
NDP7051 Rev. D
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
70A, 50V. R
DS(ON)
= 0.013Ω @ V
GS
=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
© 1997 Fairchild Semiconductor Corporation
