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0515
DGSS 10-06CC
IXYS reserves the right to change limits, Conditions and dimensions.
Type Marking on product Circuit Package
DGSS 10-06CC DGSS 10-06CC
V
RRM
= 600 V (2x300V)
I
DC
= 25 A
C
Junction
= 10.7 pF
Gallium Arsenide Schottky Rectifier
Second generation
ISOPLUS220
TM
Electrically Isolated Back Surface
Preliminary Data
Features
GaAs Schottky Diode with Enhanced
Barrier Height:
• lowest operating forward voltage drop due
to additional injection of minority carriers
• high switching speed
- low junction capacity of GaAs diode
independent from temperature
- short and low reverse recovery current
peak due to short lifetime of minority
carriers
- soft turn off
• low leakage current
ISOPLUS220
TM
Package:
• isolated back surface
• low coupling capacy between pins
and heatsink
• enlarged creepage
• high reliability
• industry standard outline
Applications
Power Factor Correction (PFC)
Switched Mode Power Supplies:
• AC-DC converters
• DC-DC converters
with:
• high switching frequency
• high efficiency
• low EMI
for use e. g. in:
• telecom
• computer
• automotive equipment
ISOPLUS220A
1
2
3
123
Data according to IEC 60747 and per diode unless otherwise specified
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 10 A; T
VJ
= 25°C 1.7 2.1 V
I
F
= 10 A; T
VJ
= 125°C 1.2 V
I
R
V
R
= V
RRM
;T
VJ
= 25°C 0.25 mA
V
R
= V
RRM
;T
VJ
= 125°C 25 µA
I
RM
I
F
= 5 A; -di
F
/dt = 150 A/µs; 1.4 A
t
rr
V
R
= 150 V; T
VJ
= 125°C 23 ns
C
J
V
R
= 150 V; T
VJ
= 125°C 10.7 pF
R
thJC
5.2 K/W
Symbol Conditions Maximum Ratings
V
RRM/RSM
(between terminal 1 and 3) 600 V
V
RRM/RSM
300 V
I
FAV
T
C
= 25°C; DC 25 A
I
FAV
T
C
= 90°C; DC 15 A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine 80 A
P
tot
T
C
= 25°C29W
Diode
