2SK4037
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK4037
470 MHz Band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for
high frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
• Output power: P
o
= 36.5dBmW (typ)
• Gain: G
p
= 11.5dB (typ)
• Drain Efficiency: ηD = 60.0% (typ)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
12 V
Gate-source voltage V
GSS
(Note 1) 3 V
Drain current I
D
3 A
Power dissipation P
D
(Note 2) 20 W
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−45 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Operating Ranges: 0 to 3V
Note 2: Tc = 25°C (When mounted on a 0.8 mm glass epoxy PCB)
Marking
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-5N1A
Weight: 0.08 g (typ.)
UE F
**
Type Name
Dot
Lot No.
Start of commercial production
2005-01
