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VS-UFL130FA60

P1-P3P4-P6P7-P7
VS-UFL130FA60
www.vishay.com
Vishay Semiconductors
Revision: 31-May-16
4
Document Number: 93658
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Typical I
rr
Diode vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd +Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
0
25
50
75
100
125
150
175
0 20406080100120140
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
DC
Square wave (D = 0.50)
Rated V
R
applied
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
0
20
40
60
80
100
120
140
160
180
200
220
240
0 20406080100120140
RMS Limit
D = 0.05
D = 0.10
D = 0.20
D = 0.33
D = 0.50
DC
t
rr
(ns)
dI
F
/dt (A/µs)
100 1000
V
R
= 200 V
50
100
150
200
250
I
F
= 50 A, 125 °C
I
F
= 50 A, 25 °C
Q
rr
(nC)
dI
F
/dt (A/µs)
100 1000
I
F
= 50 A, T
J
= 125 °C
I
F
= 50 A, T
J
= 25 °C
V
R
= 200 V
0
500
1000
1500
2000
2500
3000
I
rr
(A)
dI
F
/dt (A/μs)
V
R
= 200 V
1000100
0
5
10
15
20
25
30
35
I
F
= 50 A, 25 °C
I
F
= 50 A, 125 °C
VS-UFL130FA60
www.vishay.com
Vishay Semiconductors
Revision: 31-May-16
5
Document Number: 93658
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Reverse Recovery Parameter Test Circuit
Fig. 11 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-UFL130FA60
www.vishay.com
Vishay Semiconductors
Revision: 31-May-16
6
Document Number: 93658
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
2 separate diodes,
parallel pin-out
F
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
1 - Vishay Semiconductors product
2 - Ultrafast rectifier
3
- Ultrafast Pt diffused, low V
F
4 - Current rating (130 = 130 A)
5 - Circuit configuration (2 separate diodes, parallel pin-out)
6 - Package indicator (SOT-227 standard insulated base)
- Voltage rating (60 = 600 V)
7
Device code
51 32 4 6 7
VS- UF L 130 F A 60
1
43
2
Lead Assignment
1
4
2
3
P1-P3P4-P6P7-P7

VS-UFL130FA60

Mfr. #:
Buy VS-UFL130FA60
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 130 Amp 600 Volt
Lifecycle:
New from this manufacturer.
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