TLP131(F)

TLP131
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP131
Office Machine
Programmable Controllers
AC / DCInput Module
Telecommunication
The TOSHIBA mini flat coupler TLP131 is a small outline coupler,
suitable for surface mount assembly.
TLP131 consists of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode.
Collectoremitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Isolation voltage: 3750Vrms (min.)
UL recognized: UL1577, file No. E67349
TLP131 base terminal is for the improvement of speed, reduction of dark
current, and enable operation.
Pin Configurations
(top view)
1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base
5
4
3
1
6
Unit in mm
TOSHIBA 114C2
Weight: 0.09 g (typ.)
TLP131
2007-10-01
2
Current Transfer Ratio
Current Transfer
Ratio (%)
(I
C
/ I
F
)
I
F
= 5mA, V
CE
= 5V, Ta = 25°C
Type Classification
Min. Max.
Marking Of Classification
(None) 50 600 BLANK, Y, Y
, G, G
, B, B
, GB
Rank Y 50 150 Y, Y
Rank GR 100 300 G, G
TLP131
Rank GB 100 600 G, G
, B, B
, GB
Note: Application type name for certiffication test,please use standard product type name,i.e.
TLP131(GB): TLP131
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current I
F
50 mA
Forward current derating (Ta53°C) ΔI
F
/ °C 0.7 mA / °C
Peak forward current (100μs pulse,100pps) I
FP
1 A
Reverse voltage V
R
5 V
LED
Junction temperature T
j
125 °C
Collectoremitter voltage V
CEO
80 V
Collectorbase voltage V
CBO
80 V
Emittercollector voltage V
ECO
7 V
Emitterbase voltage V
EBO
7 V
Collector current I
C
50 mA
Peak collector current (10ms pulse,100pps) I
CP
100 mA
Power dissipation P
C
150 mW
Power dissipation derationg (Ta 25°C) ΔP
C
/ °C 1.5 mW / °C
Detector
Junction temperature T
j
125 °C
Storage temperature range T
stg
55~125 °C
Operating temperature range T
opr
55~100 °C
Lead soldering temperature (10s) T
sol
260 °C
Total package power dissipation P
T
200 mW
Total package power dissipation derating (Ta 25°C) ΔP
T
/ °C 2.0 mW / °C
Isolation voltage (AC, 1min., RH 60%) (Note 1) BV
S
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
TLP131
2007-10-01
3
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage V
CC
5 48 V
Forward current I
F
16 25 mA
Collector current I
C
1 10 mA
Operating temperature T
opr
25
85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage V
F
I
F
= 10 mA 1.0 1.15 1.3 V
Reverse current I
R
V
R
= 5 V 10 μA
LED
Capacitance C
T
V = 0, f = 1 MHz 30 pF
Collectoremitter
breakdown voltage
V
(BR)CEO
I
C
= 0.5mA 80 V
Emittercollector
breakdown voltage
V
(BR)ECO
I
E
= 0.1mA 7 V
Collectorbase breakdown voltage V
(BR)CBO
I
C
= 0.1mA 80 V
Emitterbase breakdown voltage V
(BR)EBO
I
E
= 0.1mA 7 V
V
CE
= 48V 10 100 nA
collector dark current I
CEO
V
CE
= 48V,Ta = 85°C 2 50 μA
Collector dark current I
CER
V
CE
= 48V,Ta = 85°C
R
BE
= 1M
0.5 10 μA
Collector dark current I
CBO
V
CB
= 10V 0.1 nA
DC forward current gain h
FE
V
CE
= 5V,I
C
= 0.5mA 400
Detector
Capacitance (collector to emitter) C
CE
V = 0, f = 1MHz 10 pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
50 600
Current transfer ratio I
C
/ I
F
I
F
= 5 mA, V
CE
= 5 V
Rank GB
100 600
%
60
Saturated CTR I
C
/ I
F (sat)
I
F
= 1 mA, V
CE
= 0.4 V
Rank GB
30
%
Base photocurrent I
PB
I
F
= 5mA,V
CB
= 5V 10 μA
I
C
= 2.4 mA, I
F
= 8 mA 0.4
0.2
Collectoremitter
saturation voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
0.4
V
Offstate collector current I
C (off)
I
F
= 0.7mA, V
CE
= 48 V 1 10 μA

TLP131(F)

Mfr. #:
Manufacturer:
Description:
OPTOISO 3.75KV TRANS 6-MFSOP
Lifecycle:
New from this manufacturer.
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