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MPS6717

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1 Publication Order Number:
MPS6717/D
MPS6717
One Watt Amplifier
Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
80 Vdc
Collector−Base Voltage V
CBO
80 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
1.0
8.0
W
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
2.5
20
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
50 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−92 (TO−226)
CASE 29−10
STYLE 1
MARKING DIAGRAM
3
1
2
http://onsemi.com
MPS
6717
AYWWG
G
MPS6717 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
COLLECTOR
3
2
BASE
1
EMITTER
Device Package Shipping
†
ORDERING INFORMATION
MPS6717 TO−92 5000 Units / Bulk
MPS6717G TO−92
(Pb−Free)
5000 Units / Bulk
MPS6717RLRA TO−92 2000/Tape & Ree
l
MPS6717RLRAG TO−92
(Pb−Free)
2000/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MPS6717
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
80 − Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
80 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0 − Vdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
I
CBO
− 0.1
mAdc
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
I
EBO
− 10
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 250 mAdc, V
CE
= 1.0 Vdc)
h
FE
80
50
−
250
−
Collector−Emitter Saturation Voltage
(I
C
= 250 mAdc, I
B
= 10 mAdc)
V
CE(sat)
− 0.5 Vdc
Base−Emitter On Voltage
(I
C
= 250 mAdc, V
CE
= 1.0 Vdc)
V
BE(on)
− 1.2 Vdc
SMALL−SIGNAL CHARACTERISTICS
Collector−Base Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
− 30 pF
Small−Signal Current Gain
(I
C
= 200 mAdc, V
CE
= 5.0 Vdc, f = 20 MHz)
h
fe
2.5 25 −
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
400
0.5 0.7 1.0 2.0 3.0 5.0 7.0
10 20 30 50 70 100 200
200
100
80
60
40
h
FE
, DC CURRENT GAIN
T
J
= 125°C
25°C
−55°C
V
CE
= 1.0 V
300 500
MPS6717
http://onsemi.com
3
I
B
, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1 101.0
T
J
= 25°C
I
C
= 10 mA
0.05 0.2 0.5 2.0 5.0 20
100 mA 250 mA
50
mA
50
500 mA
I
C
, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.5 1.0 20020
T
J
= 25°C
V
BE(on)
@ V
CE
= 1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
5.0 10 50 100
V
BE(sat)
@ I
C
/I
B
= 10
2.0 500
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
−0.8
−2.8
1.0 10010
q
VB
for V
BE
0.5 2.0 5.0 20 50 200
−1.2
−1.6
−2.0
−2.4
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
500
C, CAPACITANCE (pF)
Figure 5. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
1005020105.02.01.00.50.20.1
80
60
40
20
10
4.0
T
J
= 25°C
C
obo
C
ibo
8.0
6.0
Figure 6. Current−Gain — Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
20070503020107.05.03.02.0
300
200
100
70
50
30
V
CE
= 2.0 V
T
J
= 25°C
f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
T
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
2 k
1.0
I
C
, COLLECTOR CURRENT (mA)
2.0 5.0
Figure 7. Active Region — Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
500
200
100
50
20
10
10 20 60 80 100
MPS6717
100 ms
1.0 ms
1.0 s
T
C
= 25°C
T
A
= 25°C
dcdc
1 k
DUTY CYCLE ≤ 10%
P1-P3P4-P4

MPS6717

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Manufacturer:
ON Semiconductor
Description:
TRANS NPN 80V 0.5A TO92
Lifecycle:
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