MPSW63RLRAG Datasheet MPSW63, MPSW63G, MPSW63RLRA | P1-P3

One Watt Darlington

Transistors

PNP Silicon

w These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

MAXIMUM RATINGS

Rating Symbol

MPSW63

MPSW64

Unit

Collector−Emitter Voltage V

CES

−30 Vdc

Collector−Base Voltage V

CBO

−30 Vdc

Emitter−Base Voltage V

EBO

−10 Vdc

Collector Current — Continuous I

C

−500 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

1.0

8.0

Watt

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

2.5

20

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

R

q

JA

125 °C/W

Thermal Resistance, Junction to Case

R

q

JC

50 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= −100 μAdc, V

BE

= 0)

V

(BR)CES

−30 — Vdc

Collector Cutoff Current

(V

CB

= −30 Vdc, I

E

= 0)

I

CBO

— −100 nAdc

Emitter Cutoff Current

(V

EB

= −10 Vdc, I

C

= 0)

I

EBO

— −100 nAdc

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductort

March, 2006 − Rev. 3

1 Publication Order Number:

MPSW63/D

MPSW63

MPSW64

CASE 29−10, STYLE 1

TO−92 (TO−226AE)

1

2

3

*

*ON Semiconductor Preferred Device

COLLECTOR 3

BASE

2

EMITTER 1

MPSW63 MPSW64

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

(1)

DC Current Gain

(I

C

= −10 mAdc, V

CE

= −5.0 Vdc) MPSW63

MPSW64

(I

C

= −100 mAdc, V

CE

= −5.0 Vdc) MPSW63

MPSW64

h

FE

5,000

10,000

20,000

—

Collector−Emitter Saturation Voltage

(I

C

= −100 mAdc, I

B

= −0.1 mAdc)

V

CE(sat)

— −1.5 Vdc

Base−Emitter On Voltage

(I

C

= −100 mAdc, V

CE

= −5.0 Vdc)

V

BE(on)

— −2.0 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(2)

(I

C

= −10 mAdc, V

CE

= −5.0 Vdc, f = 100 MHz)

f

T

125 — MHz

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. f

T

= |h

fe

| • f

test

.

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. DC Current Gain

Figure 2. “ON” Voltage Figure 3. Collector Saturation Region

−1.0 −2.0−0.5

I

C

, COLLECTOR CURRENT (mA)

200

50

5.0

3.0

2.0

−1.0 −100−0.3

I

C

, COLLECTOR CURRENT (mA)

−1.6

−2.0

−0.8

−0.4

0

I

B

, BASE CURRENT (mA)

−0.6

−30

h

FE

, DC CURRENT GAIN (X1.0 k)V, VOLTAGE (VOLTS)

−10 −20−7.0 −100 −200−50

70

−3.0

−5.0 −10

−50

−2.0

−1.6

−1.4

−1.2

−1.0

−30 −70

−300

−5.0−3.0−0.7

30

100

−300

−1.2

−0.3 −100−0.1 −1.0

−3.0 −10

−30 −300 −1 k

V , COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

−0.3

10

7.0

20

−0.5

−3 k −10 k

−0.8

−1.8

T

J

= 25°C

I

C

= −10 mA

−50 mA −100 mA −175 mA −300 mA

T

J

= 25°C

I

C

/I

B

= 100

T

J

= 125°C

25°C

−55°C

−10 V

V

CE

= −2.0 V

−5.0 V

V

BE(sat)

@ I

C

/I

B

= 100

V

CE(sat)

@ I

C

/I

B

= 1000

V

BE(on)

@ V

CE

= −5.0 V

MPSW63 MPSW64

http://onsemi.com

3

Figure 4. Temperature Coefficients Figure 5. Current−Gain — Bandwidth Product

Figure 6. Capacitance Figure 7. Active Region, Safe Operating Area

−0.5 −100−0.3

I

C

, COLLECTOR CURRENT (mA)

+5.0

+1.0

−1.0

−2.0

−3.0

−5.0

I

C

, COLLECTOR CURRENT (mA)

20

−10

−0.5 −2.0−0.1

V

R

, REVERSE VOLTAGE (VOLTS)

5.0

7.0

3.0

2.0

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

−1 k

−500

−200

−100

−1.0

R

I

−10−5.0 −20

−1.0

−5.0

−20

−4.0

600

100

60

40

30

C, CAPACITANCE (pF)

−300

0

−0.5 −100−0.3 −10−1.0

−2.0 −5.0

−50 −300

f , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

−0.2 −30

10

−2 k

−5.0−1.5 −20−10 −30−2.0

T

, COLLECTOR CURRENT (mA)

C

15

20

−20

400

300

200

+2.0

+4.0

+3.0

−2.0 −50

C

ibo

C

obo

T

J

= 25°C

f = 1.0 MHz

, TEMPERATURE COEFFICIENT (mV/ C)°

qV

T

J

= 25°C

*APPLIES FOR I

C

/I

B

≤ h

FE

/100

+25°C TO +125°C

−50°C TO +25°C

R

q

VB

FOR V

BE

*R

q

VC

FOR V

CE(sat)

+25°C TO +125°C

−50°C TO +25°C

V

CE

= −20 V

−10 V

−5.0 V

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

DUTY CYCLE ≤ 10%

T

A

= 25°C

T

C

= 25°C

1.0 s

1.0 mS

100 ms

MPSW63RLRAG

MPSW63RLRAG

Products related to this Datasheet