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PMEG2005ESFYL

P1-P3P4-P6P7-P9P10-P12P13-P13
Nexperia
PMEG2005ESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005ESF All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 10 March 2017 4 / 13
aaa-006824
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
3
Z
th(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for anode and cathode 1 cm
2
each
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-006825
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
Z
th(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)R
reverse reverse
breakdown voltage
I
R
= 100 µA; t
p
= 300 µs; δ = 0.02 ;
T
j
= 25 °C
20 - - V
I
F
= 0.1 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 185 250 mV
I
F
= 1 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 245 320 mV
V
F
forward voltage
I
F
= 10 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 310 380 mV
Nexperia
PMEG2005ESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005ESF All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 10 March 2017 5 / 13
Symbol Parameter Conditions Min Typ Max Unit
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 390 450 mV
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 435 490 mV
I
F
= 500 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 555 620 mV
V
R
= 6 V; T
j
= 25 °C; pulsed - 0.26 - µA
V
R
= 10 V; T
j
= 25 °C; pulsed - 0.37 2 µA
I
R
reverse current
V
R
= 20 V; T
j
= 25 °C; pulsed - 0.88 3.5 µA
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C - 25 - pFC
d
diode capacitance
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C - 9 - pF
t
rr
reverse recovery time I
F
= 500 mA; I
R
= 500 mA;
I
R(meas)
= 100 mA; T
j
= 25 °C
- 1.9 - ns
aaa-012777
10
-3
10
-2
10
-1
1
I
F
(A)
10
-4
V
F
(V)
0 0.80.60.2 0.4
(1) (2) (3) (4) (5)
pulsed condition
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 85 °C
(4) T
j
= 25 °C
(5) T
j
= −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
aaa-012779
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
I
R
(A)
10
-11
V
R
(V)
0 20155 10
(1)
(2)
(3)
(4)
(5)
pulsed condition
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 85 °C
(4) T
j
= 25 °C
(5) T
j
= −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
Nexperia
PMEG2005ESF
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005ESF All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 10 March 2017 6 / 13
V
R
(V)
0 20168 124
aaa-006828
25.0
12.5
37.5
50.0
C
d
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
I
F(AV)
(A)
0 0.80.60.2 0.4
aaa-012781
0.2
0.3
0.1
0.4
0.5
P
F(AV)
(W)
0
(1)
(2)
(3)
(4)
T
j
= 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
V
R
(V)
0 20155 10
aaa-008575
5
10
15
P
R(AV)
(mW)
0
(1)
(2)
(3)
(4)
T
j
= 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
17512525 150100500 75
aaa-012783
0.4
0.2
0.6
0.8
I
F(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 9. Average forward current as a function of
ambient temperature; typical values
P1-P3P4-P6P7-P9P10-P12P13-P13

PMEG2005ESFYL

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Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 20V 0.5A MEGA Schottky
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New from this manufacturer.
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