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MGA-13116-BLKG

P1-P3P4-P6P7-P9P10-P11
MGA-13116
High Gain, High Linearity, Very Low Noise Amplier
Data Sheet
Description
Avago Technologies’ MGA-13116 is a two stage, easy-to-
use GaAs MMIC Low Noise Amplier (LNA). The LNA has
low noise with good input return loss and high linearity
achieved through the use of Avago Technologies’ propri-
etary 0.25 P m GaAs Enhancement-mode pHEMT process.
Minimum matching needed for input, output and the
inter-stage between the two LNA.
It is designed for optimum use between 400 MHz to 1.5
GHz. For optimum performance at higher frequency from
1.5 GHz to 2.5 GHz, the MGA-13216 is recommended. Both
MGA-13116 & MGA-13216 share the same package and
pinout conguration.
Pin Conguration and Package Marking
4.0 x 4.0 x 0.85 mm
3
16-lead QFN
Note:
Package marking provides orientation and identication
“13116” = Device Part Number
“YYWW” = Work Week and Year of Manufacture
“XXXX” = Lot Number
Features
x Optimum frequency of operation 400 MHz – 1.5 GHz
x Very low noise gure
x High gain
x High linearity performance
x Excellent isolation
x GaAs E-pHEMT Technology
[1]
x Low cost small package size: 4.0 x 4.0 x 0.85 mm
3
Specications
900 MHz; Q1: 5 V, 55 mA (typ) Q2: 5 V, 112 mA (typ)
x 0.51 dB Noise Figure
x 38 dB Gain
x 52 dB RFoutQ1 to RFinQ2 Isolation
x 41.4 dBm Output IP3
x 23.3 dBm Output Power at 1dB gain compression
Applications
x Low noise amplier for cellular infrastructure including
GSM, CDMA, and W-CDMA.
x Other very low noise applications.
Simplied Schematic
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Notes: Enhancement mode technology employs positive gate bias,
thereby eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
C10
R2
L1
C8
R3
C9
R4
C7
L2
C2
C3
C4
C5
C1
C6
L3
R1
15
12
14
11
13
9
8765
4
2
16
103
1
Q1bias
Vdd1
Vdd2
Q1 Q2
RFOUT
RFIN
AVAGO
13116
YYWW
XXXX
8
7
6
5
13
14
15
16
1
2
3
4
12
11
10
9
GND
Pin 2
Pin 3
Pin 10
Pin 11
Pin 13
Pin 16
Vbias
RFinQ1
RFoutQ2
RFoutQ2
RFinQ2
RFoutQ1
TOP VIEW BOTTOM VIEW
All other pics NC
Not Connected
2
MGA-13116 Absolute Maximum Rating
[1]
TA = 25° C
Symbol Parameter Units Absolute Maximum
Vdd1 Device Voltage V 5.5
Vdd2 Device Voltage V 5.5
Idd1 Q1 Drain Current mA 90
P
d
Power Dissipation
(2)
W 1.02
P
in,max
CW RF Input Power dBm 20
T
j,max
Junction Temperature °C 150
T
stg
Storage Temperature °C -65 to 150
Thermal Resistance
[3]
(V
dd1
=5.0V, I
dd1
=55mA, V
dd2
=5.0V,
I
dd2
=112mA) T
jc
= 41.9°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Board temperature (T
c
) is 25° C. For T
c
>100° C,
derate the device power at 23.9 mW per
°C rise in board temperature adjacent to
package bottom.
3. Thermal resistance measured using Infrared
Measurement Technique.
Electrical Specications
[1]
RF performance at Vdd1 = 5 V, V
dd2
= 5 V, 900 MHz, T
A
= 25° C, measured on the demo board.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Idd1 Current at Q1 mA 42 55 69
Idd2 Current at Q2 mA 92 112 131
NF Noise Figure dB – 0.51 0.85
Gain Gain dB 36.5 38 39.5
OIP3
[2]
Output Third Order Intercept Point dBm 37.5 41.4 –
OP1dB Output Power at 1 dB Gain Compression dBm 22 23.3 –
IRL
Input Return Loss, 50 : source
dB – -19 –
ORL
Output Return Loss, 50 : load
dB – -12 –
|S12| Reverse Isolation dB – 48 –
|ISOL
1-2
| Isolation between Q1’s Output pin & Q2’s Input pin dB – 52 –
Notes:
1. Measurements obtained using demo board described in Figure 7 with component list in Table 1. Input and Output trace loss is not de-embedded
from the measurement.
2. OIP3 test condition: f
tone1
= 900 MHz, f
tone2
= 901 MHz with input power of -29 dBm per tone.
3. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
3
45 5550 6560
LSL USL
0.2 0.3 0.4 0.6 0.70.5 0.8
USL
37 38 39
LSL USL
38 39 4140
4342
LSL
22 2322.5 23.5
LSL
LSL USL
100 110 120 130
Product consistency Distribution Charts
[1,2]
Figure 1. Idd1 @ 900 MHz, Vdd1 = 5 V, LSL = 42 mA, Nominal = 55 mA,
USL = 69 mA
Figure 3. Noise Figure @ 900 MHz, Vdd1 = 5 V, Vdd2 = 5 V, Nominal = 0.51 dB,
USL = 0.85 dB
Figure 4. Gain @ 900 MHz, Vdd1 = 5 V, Vdd2 = 5 V, LSL = 36.5 dB,
Nominal = 38 dB, USL = 39.5 dB
Figure 5. OIP3 @ 900 MHz, Vdd1 = 5 V, Vdd2 = 5 V, LSL = 37.5 dBm,
Nominal = 41.4 dBm
Figure 6. OP1dB @ 900 MHz, Vdd1 = 5 V, Vdd2 = 5 V, LSL = 22 dBm,
Nominal = 23.3 dBm
Figure 2. Idd2 @ 900 MHz, Vdd2 = 5 V, LSL = 92 mA, Nominal = 112 mA,
USL = 131 mA
Notes:
1. Data sample size is 10026 samples taken from 3 dierent wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
2. Measurements are made on production test board which represents a trade-o between optimal Gain, NF, OIP3 and OP1dB. Circuit losses have
been de-embedded from actual measurements.
P1-P3P4-P6P7-P9P10-P11

MGA-13116-BLKG

Mfr. #:
Buy MGA-13116-BLKG
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Two Stage LNA 0.4-1.5 GHz
Lifecycle:
New from this manufacturer.
Delivery:
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