AOY516

AOD516/AOI516/AOY516
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
1600
1800
0 5 10 15 20 25 30
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
0
50
100
150
200
250
300
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
C
oss
C
rss
V
DS
=15V
I
D
=20A
D=T
on
/T
T
=T
+P
.Z
.R
In descending order
T
J(Max)
=150°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
10
Normalized Transient
D=T
on
/T
In descending order
Single Pulse
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC
=5°C/W
0.01
0.1
1
1E-05 0.0001 0.001 0.01 0.1 1 10
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
on
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC
=3°C/W
Rev.5.0: July 2013
www.aosmd.com
Page 4 of 6
AOD516/AOI516/AOY516
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Normalized Transient
D=T
on
/T
T
=T
+P
.Z
.R
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Power Dissipation (W)
T
CASE
(°
°°
°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
Current rating I
D
(A)
T
CASE
(°
°°
°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)
T
A
=25°C
40
0.001
0.01
0.1
1
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJA
=50°C/W
Rev.5.0: July 2013
www.aosmd.com
Page 5 of 6
AOD516/AOI516/AOY516
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT
Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Vds
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.5.0: July 2013
www.aosmd.com
Page 6 of 6

AOY516

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH TO251B
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet