10BQ100PbF
Bulletin PD-20786 rev. A 07/04
Part number 10BQ100PbF
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
100
Voltage Ratings
V
FM
Max. Forward Voltage Drop (1) 0.78 V @ 1A
* See Fig. 1 0.89 V @ 2A
0.62 V @ 1A
0.72 V @ 2A
I
RM
Max. Reverse Leakage Current (1) 0.5 mA T
J
= 25 °C
* See Fig. 2 1 mA T
J
= 125 °C
C
T
Typical Junction Capacitance 42 pF V
R
= 5V
DC
, (test signal range 100kHz to 1MHz) 25°C
L
S
Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ µs
(Rated V
R
)
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Electrical Specifications
Parameters 10BQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
I
F(AV)
Max. Average Forward Current 1.0 A 50% duty cycle @ T
L
= 152 °C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive 780 A 5µs Sine or 3µs Rect. pulse
Surge Current 38 10ms Sine or 6ms Rect. pulse
E
AS
Non- Repetitive Avalanche Energy 1.0 mJ T
J
= 25 °C, I
AS
= 0.5A, L = 8mH
I
AR
Repetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Parameters 10BQ Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM
applied
T
J
Max. Junction Temperature Range (*) - 55 to 175 °C
T
stg
Max. Storage Temperature Range - 55 to 175 °C
R
thJL
Max. Thermal Resistance Junction 36 °C/W DC operation
to Lead (**)
R
thJA
Max. Thermal Resistance Junction 80 °C/W
to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar DO-214AA
Device Marking IR1J
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
< thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
(*) dPtot 1
dTj Rth( j-a)
