OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NST489AMT1G

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
1 Publication Order Number:
NST489AMT1/D
NST489AMT1,
NSVT489AMT1G
High Current Surface Mount
NPN Silicon Low V
CE(sat)
Switching Transistor for
Load Management in
Portable Applications
Features
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
Pb−Free Packages are Available*
MAXIMUM RATINGS (T
A
= 25C)
Rating
Symbol Max Unit
Collector-Emitter Voltage V
CEO
30 V
Collector-Base Voltage V
CBO
50 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current − Continuous I
C
2.0 A
Collector Current − Peak I
CM
3.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25C
Derate above 25C
P
D
(Note 1)
535
4.3
mW
mW/C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
234
C/W
Total Device Dissipation
T
A
= 25C
Derate above 25C
P
D
(Note 2)
1.180
9.4
W
mW/C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
106
C/W
Thermal Resistance,
Junction−to−Lead #1
R
q
JL
(Note 1)
R
q
JL
(Note 2)
110
50
C/W
C/W
Total Device Dissipation
(Single Pulse < 10 s)
P
Dsingle
(Notes 2 and 3) 1.75
W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 3.9 mm
2
of copper area.
2. FR−4 with 1 oz and 645 mm
2
of copper area.
3. Refer to Figure 8.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TSOP−6
CASE 318G
STYLE 6
DEVICE MARKING
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
30 VOLTS, 3.0 AMPS
NPN TRANSISTOR
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
N2 M G
G
Device Package Shipping
†
ORDERING INFORMATION
NST489AMT1 TSSOP−6
ORDERING INFORMATION
3,000 /
Tape & Reel
NST489AMT1G TSSOP−6
(Pb−Free)
3,000 /
Tape & Reel
N2 = Specific Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation may vary depending upon
manufacturing location.
(Note: Microdot may be in either location)
NSVT489AMT1G TSSOP−6
(Pb−Free)
3,000 /
Tape & Reel
NST489AMT1, NSVT489AMT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage (I
C
= 10 mA, I
B
= 0) V
(BR)CEO
30 − − V
Collector−Base Breakdown Voltage (I
C
= 0.1 mA, I
E
= 0) V
(BR)CBO
50 − − V
Emitter− Base Breakdown Voltage (I
E
= 0.1 mA, I
C
= 0) V
(BR)EBO
5.0 − − V
Collector Cutoff Current (V
CB
= 30 V, I
E
= 0) I
CBO
− − 0.1
mA
Collector−Emitter Cutoff Current (V
CES
= 30 V) I
CES
− − 0.1
mA
Emitter Cutoff Current (V
EB
= 4.0 V) I
EBO
− − 0.1
mA
ON CHARACTERISTICS
DC Current Gain (Note 4) (I
C
= 1.0 mA, V
CE
= 5.0 V)
(I
C
= 0.5 A, V
CE
= 5.0 V)
(I
C
= 1.0 A, V
CE
= 5.0 V)
h
FE
300
300
200
−
500
−
−
900
−
Collector− Emitter Saturation Voltage (Note 4) (I
C
= 1.0 A, I
B
= 100 mA)
(I
C
= 0.5 A, I
B
= 50 mA)
(I
C
= 0.1 A, I
B
= 1.0 mA)
V
CE(sat)
−
−
−
0.10
0.06
0.05
0.200
0.125
0.075
V
Base − Emitter Saturation Voltage (Note 4) (I
C
= 1.0 A, I
B
= 0.1 A) V
BE(sat)
− − 1.1 V
Base − Emitter Turn−on Voltage (Note 4) (I
C
= 1.0 A, V
CE
= 2.0 V) V
BE(on)
− − 1.1 V
Cutoff Frequency (I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz f
T
200 300 − MHz
Output Capacitance (f = 1.0 MHz) C
obo
− − 15 pF
4. Pulsed Condition: Pulse Width 300 msec, Duty Cycle 2%.
Figure 1. V
CE
(sat)
versus I
b
0.001 0.20.01 0.1
1.0
0
0.1
V
CE(sat)
(V)
I
b
(A)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure 2. V
CE
(sat)
versus I
c
0.001 20.01 0.1
1.0
0
0.1
V
CE(sat)
(V)
I
c
(A)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
I
C
= 2 A
I
C
= 1 A
I
C
= 500 mA
I
C
= 100 mA
I
c
/I
b
= 100
I
c
/I
b
= 10
Figure 3. h
FE
versus I
c
Figure 4. V
BE
(
on
)
versus I
c
0.001 20.01 0.1
1.2
0
V
BE(on)
(V)
I
c
(A)
0.2
0.4
0.6
0.8
1
1.0
+125C
+25C
−55C
V
CE
= 5 V
0.001 20.01 0.1
800
0
100
h
FE
I
c
(A)
200
300
400
500
600
700
1
+125C
+25C
−55C
V
CE
= 5 V
NST489AMT1, NSVT489AMT1G
http://onsemi.com
3
Figure 5. V
BE(sat)
versus I
c
0.001 20.01 0.1
1.2
0
V
BE
(sat) (V)
I
c
(A)
0.2
0.4
0.6
0.8
1.0
Figure 6. Safe Operating Area
I
C
COLLECTOR CURRENT (A)
V
CE(sat)
(V)
1
I
c
/I
b
= 100
I
c
/I
b
= 10
0.01
0.10
1.00
10.00
0.10 1.00 10.00 100.00
100 ms
10 ms
1 ms
SINGLE PULSE T
amb
= 25C
1 s
dc
3.0
10
100
1000
1 10 100 1000
Figure 7. f
T
(MHZ) versus I
C
(mA) V
CE
= 5.0 V
IC, COLLECTOR CURRENT (mA)
f
T
, CURRENT−GAIN BANDWIDTH
PRODUCT (MHz)
0.1
Figure 8. Normalized Thermal Response
t, TIME (sec)
1.0
0.001
0.01
0.00001 0.01 0.1 1.0
100 1000
0.1
0.0001 0.001
10
r(t), NORMALIZED TRANSIENT THERMAL
D = 0.5
0.02
0.05
0.2
0.01
SINGLE PULSE
RESISTANCE
P1-P3P4-P4

NST489AMT1G

Mfr. #:
Buy NST489AMT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 2A 50V NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet