MOC212R1M Datasheet MOC211R1M, MOC212R1VM, MOC212R1M | P1-P3

4/10/03

SMALL OUTLINE OPTOCOUPLERS

TRANSISTOR OUTPUT

Page 1 of 9

MOC211-M MOC212-M MOC213-M

DESCRIPTION

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a

monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic

package. They are ideally suited for high density applications, and eliminate the need for

through-the-board mounting.

FEATURES

• UL Recognized (File #E90700, volume 2)

• VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211V-M)

• Convenient Plastic SOIC-8 Surface Mountable Package Style

• Standard SOIC-8 Footprint, with 0.050" Lead Spacing

• Compatible with Dual Wave, Vapor Phase and IR Reﬂow Soldering

• High Input-Output Isolation of 2500 V

AC(rms)

Guaranteed

• Minimum BV

CEO

of 30V guaranteed

APPLICATIONS

• General Purpose Switching Circuits

• Interfacing and coupling systems of different potentials and impedances

• Regulation Feedback Circuits

• Monitor and Detection Circuits

BASE

N/C

ANODE

CATHODE

1

2

3

4 5

6

7

8

EMITTER

COLLECTOR

N/C

4/10/03

Page 2 of 9

SMALL OUTLINE OPTOCOUPLERS

TRANSISTOR OUTPUT

MOC211-M MOC212-M MOC213-M

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C Unless otherwise speciﬁed)

Rating Symbol Value Unit

EMITTER

Forward Current – Continuous

I

F

60 mA

Forward Current – Peak (PW = 100 µs, 120 pps)

I

F

(pk)

1.0 A

Reverse Voltage

V

R

6.0 V

LED Power Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

90

0.8

mW

mW/°C

DETECTOR

Collector-Emitter Voltage

V

CEO

30 V

Emitter-Collector Voltage

V

ECO

7.0 V

Collector-Base Voltage

V

CBO

70 V

Collector Current-Continuous

I

C

150 mA

Detector Power Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

150

1.76

mW

mW/°C

TOTAL DEVICE

Input-Output Isolation Voltage (1,2,3)

(f = 60 Hz, t = 1 min.)

V

ISO

2500 Vac(rms)

Total Device Power Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

250

2.94

mW

mW/°C

Ambient Operating Temperature Range

T

A

-40 to +100 °C

Storage Temperature Range

T

stg

-40 to +150 °C

4/10/03

Page 3 of 9

SMALL OUTLINE OPTOCOUPLERS

TRANSISTOR OUTPUT

MOC211-M MOC212-M MOC213-M

** Typical values at T

A

= 25°C

1. Isolation Surge Voltage, V

ISO

, is an internal device dielectric breakdown rating.

2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.

3. V

ISO

rating of 2500 V

AC(rms)

for t = 1 min. is equivalent to a rating of 3,000 V

AC(rms)

for t = 1 sec.

4. Current Transfer Ratio (CTR) = I

C

/I

F

x 100%.

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C Unless otherwise speciﬁed)

Parameter Test Conditions Symbol Min Typ** Max Unit

EMITTER

Input Forward Voltage

(I

F

= 10 mA) V

F

— 1.15 1.5 V

Reverse Leakage Current

(V

R

= 6.0 V) I

R

— 0.001 100 µA

Input Capacitance

C

IN

—18— pF

DETECTOR

Collector-Emitter Dark Current

(V

CE

= 10 V, T

A

= 25°C)

(V

CE

= 10 V, T

A

= 100°C)

I

CEO1

I

CEO2

—

1.0

50

—

nA

µA

Collector-Emitter Breakdown Voltage

(I

C

= 100 µA) BV

CEO

30 90 — V

Emitter-Collector Breakdown Voltage

(I

E

= 100 µA) BV

ECO

7.0 7.8 — V

Collector-Emitter Capacitance

(f = 1.0 MHz, V

CE

= 0) C

CE

— 7.0 — pF

COUPLED

Collector-Output Current

(4)

MOC211-M

MOC212-M (I

F

= 10 mA, V

CE

= 10 V)

MOC213-M

CTR

20

50

100

65

90

140

—

%

Isolation Surge Voltage

(1,2,3)

(60 Hz AC Peak, 1 min.)

V

ISO

2500 — — Vac(rms)

Isolation Resistance

(2)

(V = 500 V)

R

ISO

10

11

——

Ω

Collector-Emitter Saturation Voltage

(I

C

= 2.0 mA, I

F

= 10 mA) V

CE (sat)

— 0.15 0.4 V

Isolation Capacitance

(2)

(V = 0 V, f = 1 MHz)

C

ISO

— 0.2 — pF

Tu r n-On Time

(I

C

= 2.0 mA, V

CC

= 10 V, R

L

= 100

Ω

)

(Fig. 6)

t

on

— 7.5 — µs

Tu r n-Off Time

(I

C

= 2.0 mA, V

CC

= 10 V, R

L

= 100

Ω

)

(Fig. 6)

t

off

— 5.7 — µs

Rise Time

(I

C

= 2.0 mA, V

CC

= 10 V, R

L

= 100

Ω

)

(Fig. 6)

t

r

— 3.2 — µs

Fall Time

(I

C

= 2.0 mA, V

CC

= 10 V, R

L

= 100

Ω

)

(Fig. 6)

t

f

— 4.7 — µs

MOC212R1M

MOC212R1M

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