©2005 Fairchild Semiconductor Corporation
1
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MBR20S100CT Rev. A
MBR20S100CT Schottky Barrier Rectifier
MBR20S100CT
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics
T
C
= 25°C unless otherwise noted
* Pulse Test: Width = 300µs, Duty Cycle = 2%
Symbol Parameter Value Units
V
RRM
Maximum Repetitive Reverse Voltage 100 V
V
R
Maximum DC Reverse Voltage 100 V
I
F(AV)
Average Rectified Forward Current @T
C
= 135°C20 A
I
FSM
Non-Repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
200 A
T
J
, T
STG
Operating Junction and Storage Temperature -65 to +150 °C
Symbol Parameter Value Units
R
θJC
Maximum Thermal Resistance, Junction to Case (per diode) 1.54 °C/W
Symbol Parameter Value Units
V
FM*
Maximum Instantaneous Forward Voltage
I
F
= 10A
I
F
= 10A
I
F
= 20A
I
F
= 20A
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
-
0.70
0.95
0.85
V
V
V
V
I
RM*
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25°C
T
C
= 125°C
0.1
20
mA
mA
1. Anode 2.Cathode 3. Anode
TO-220
Marking: YM20S100CT
1 2 3
