SUD50N03-06AP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73540
S–52237—Rev. A, 24-Oct-05
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 A
30 V
V
DS
Temperature Coefficient
V
DS
/T
J
25
V
GS(th)
Temperature Coefficient
V
GS(th)
/T
J
I
D
= 250 A
– 6.3
mV/_C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.2 2.4 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V "100
nA
Zero Gate Voltage Drain Current
V
DS
= 30 V, V
GS
= 0 V 1
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
10
A
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10 V
50 A
-
-
a
V
GS
= 10 V, I
D
= 20 A
0.0046 0.0057
ra
n-
ource
n-
tate
es
stance
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A 0.0062 0.0078
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A 70 S
Dynamic
b
Input Capacitance C
iss
3800
Output Capacitance C
oss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz 615
pF
Reverse Transfer Capacitance C
rss
305
V
DS
= 15 V, V
GS
= 10 V, I
D
= 30 A 62 95
Total Gate Charge Q
g
30 45
Gate-Source Charge Q
gs
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 25 A 11
nC
Gate-Drain Charge Q
gd
9
Gate Resistance R
g
f = 1 MHz 0.9 1.4
Turn-On Delay Time t
d(on)
12 18
Rise Time t
r
V
= 15 V, R
= 0.5
10 15
Turn-Off Delay Time t
d(off)
,
.
I
D
^ 30 A, V
GEN
= 10 V, R
g
= 1
30 45
Fall Time t
f
8 12
Turn-On Delay Time t
d(on)
26 40
ns
Rise Time t
r
V
= 15 V, R
= 0.6
230 345
Turn-Off Delay Time t
d(off)
,
.
I
D
^ 25 A, V
GEN
= 4.5 V, R
g
= 1
25 40
Fall Time t
f
9 14
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25_C
55
c
Pulse Diode Forward Current
a
I
SM
100
A
Body Diode Voltage V
SD
I
S
= 6.7 A
0.9 1.5 V
Body Diode Reverse Recovery Time t
rr
65 100 ns
Body Diode Reverse Recovery Charge Q
rr
I 6 7 A di/dt 100 A/sT 25_C
38 60 nC
Reverse Recovery Fall Time t
a
I
F
= 6.7 A, di/dt = 100 A/s, T
J
= 25_C
50
Reverse Recovery Rise Time t
b
15
ns
Notes
a. Pulse test; pulse width v
300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
