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NTJD4152PT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 6
1 Publication Order Number:
NTJD4152P/D
NTJD4152P, NVJD4152P
Trench Small Signal
MOSFET
20 V, 0.88 A, Dual P−Channel,
ESD Protected SC−88
Features
• Leading Trench Technology for Low R
DS(ON)
Performance
• Small Footprint Package (SC70−6 Equivalent)
• ESD Protected Gate
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices
Applications
• Load/Power Management
• Charging Circuits
• Load Switching
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−0.88
A
T
A
= 85°C −0.63
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
0.272
W
T
A
= 85°C 0.141
Continuous Drain
Current (Note 2)
t v 5 s
T
A
= 25°C
I
D
−1.0
A
T
A
= 85°C −0.72
Power Dissipation
(Note 2)
t v 5 s
T
A
= 25°C
P
D
0.35
W
T
A
= 85°C 0.181
Pulsed Drain Current
t ≤ 10 ms
I
DM
±3.0 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Continuous Source Current (Body Diode) I
S
−0.48 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State
R
q
JA
460
°C/W
Junction−to−Ambient − t v 5 s
R
q
JA
357
Junction−to−Lead – Steady State
R
q
JL
226
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), steady state.
2. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), t v 5 s.
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
www.onsemi.com
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
V
(BR)DSS
R
DS(on)
Typ I
D
Max
−20 V
215 mW @ −4.5 V
345 mW @ −2.5 V
600 mW @ −1.8 V
−0.88 A
D
2
XXX MG
G
1
6
1
XXX = Device Code
M = Date Code
G = Pb−Free Package
D1 G2 S2
S1 G1 D2
(Note: Microdot may be in either location)
SC−88/SOT−363
CASE 419B
STYLE 26
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
NTJD4152P, NVJD4152P
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
=25°C unless otherwise stated)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= −16 V
T
J
= 25°C −1.0 mA
T
J
= 125°C −1.0 −5.0
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±4.5 V 0.03 1.0 mA
V
DS
= 0 V, V
GS
= ±12 V 6.0
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.45 −1.2 V
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −0.88 A 215 260
mW
V
GS
= −2.5 V, I
D
= −0.71 A 345 500
V
GS
= −1.8 V, I
D
= −0.20 A 600 1000
Forward Transconductance g
FS
V
DS
= −10 V, I
D
= −0.88 A 3.0 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −20 V
155
pF
Output Capacitance C
OSS
25
Reverse Transfer Capacitance C
RSS
18
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −10 V,
I
D
= −0.88 A
2.2
nC
Gate−to−Source Charge Q
GS
0.5
Gate−to−Drain Charge Q
GD
0.65
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −0.5 A, R
G
= 20 W
5.8
ns
Rise Time t
r
6.5
Turn−Off Delay Time t
d(OFF)
13.5
Fall Time t
f
3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −0.48 A
T
J
= 25°C −0.8 −1.2
V
T
J
= 125°C −0.66
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTJD4152P, NVJD4152P
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
−2 V
125°C
0
1
0.75
1.20.8
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
0.25
0
0.4
Figure 1. On−Region Characteristics
0
1
1.512
0.8
0.7
0.1
0.5
0
3.
5
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
15
100
10
Figure 3. On−Resistance vs. Drain Current and
Temperature
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
DSS,
LEAKAGE CURRENT (nA)
−I
D,
DRAIN CURRENT (AMPS)
01
0.1
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.0
0.8
0.6
0.4
0
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
10000
5
T
J
= −55°C
V
GS
= 0 V
0.3
75
150
T
J
= 25°C
I
D
= −0.88 A
V
GS
= −4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
2.0
V
GS
= −4.5 V
−1 V
02
0
−1.25 V
−1.5 V
−1.75 V
0.25
0.2
1.6 2
1000
0.25 0.5 0.75
0.15
V
GS
= −4.5, −3.5 & −2.5 V
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
0.4
1
1.0
−I
D,
DRAIN CURRENT (AMPS)
2.5
0
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= −4.5 V
0.5
2.0
V
GS
= −2.5 V
0.7 0.9
1.5
0.5
0.9
10
T
J
= 125°C
T
J
= −55°C
0.5
0.8
0.6
0.2
T
J
= 25°C
V
GS
= −1.8 V
1.8
1.6
1.4
1.2
T
J
= 125°C
T
J
= 150°C
2.5 3
0.2
0.3
0.4
0.5
0.6
V
DS
≥ −20 V
P1-P3P4-P5

NTJD4152PT1G

Mfr. #:
Buy NTJD4152PT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 0.88mA P-Channel ESD Protection
Lifecycle:
New from this manufacturer.
Delivery:
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